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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2SA679 2SA680
DESCRIPTION
·With TO-3 package
·Complement to type 2SC1079/1080
·High power dissipation
APPLICATIONS
·For audio power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SA679
2SA680
Open emitter
VCEO
Collector-emitter voltage
2SA679
2SA680
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
IE Emitter current
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-120
-100
-120
-100
-5
-12
12
100
150
-65~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA679 2SA680
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
2SA679
2SA680
IC=-0.1A ;IB=0
-120
-100
V
V(BR)EBO Emitter-base breakdown voltage
IE=-10mA ;IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A
-3.0 V
VBE Base-emitter on voltage
IC=-10A ; VCE=-5V
-2.5 V
ICBO Collector cut-off current
VCB=-50V; IE=0
-0.1 mA
IEBO Emitter cut-off current
VEB=-5V; IC=0
-0.1 mA
hFE-1
DC current gain
IC=-2A ; VCE=-5V
40 140
hFE-2
DC current gain
IC=-7A ; VCE=-5V
15
COB Output capacitance
IE=0 ; VCB=-10V; f=1.0MHz
900 pF
fT Transition frequency
IC=-2A ; VCE=-5V
6 MHz
hFE-1 Classifications
RY
40-80
70-140
2

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SA679 2SA680
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3