3DD303A.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 3DD303A 데이타시트 다운로드

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INCHANGE Semiconductor
iscwww.DaStaSilhieceto4Un.coNm PN Power Transistor
isc Product Specification
3DD303A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
APPLICATIONS
·Designed for B/W TV vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
40 V
VEBO
Emitter-Base Voltage
4V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=75
TJ Junction Temperature
Tstg Storage Temperature Range
3A
30 W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5 /W
isc Websitewww.iscsemi.cn

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INCHANGE Semiconductor
iscwww.DaStaSilhieceto4Un.coNm PN Power Transistor
isc Product Specification
3DD303A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0
40 V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
4V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
60 V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
1.5 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.3A
1.5 V
ICBO Collector Cutoff Current
VCB= 50V; IE= 0
0.5 mA
ICEO Collector Cutoff Current
VCE= 25V; IB=B 0
0.1 mA
hFE DC Current Gain
IC= 2A; VCE= 5V
40 250
isc Websitewww.iscsemi.cn
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