2SB1165.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SB1165 데이타시트 다운로드

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·Complement to type 2SD1722
·Low collector saturation voltage
·Fast switching time
APPLICATIONS
·For use in relay drivers,high-speed
inverters,converters.
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB1165
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-60
-50
-6
-5
-8
1.2
20
150
-55~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1165
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=;
-50
V
V(BR)CBO Collector-base breakdown voltage
IC=-10µA ;IE=0
-60
V
V(BR)EBO Emitter-base breakdown voltage
IE=-10µA ;IC=0
-6
V
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.15A
-0.28 -0.55 V
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.15A
-0.95 -1.3
V
ICBO Collector cut-off current
VCB=-40V; IE=0
-1.0 µA
IEBO Emitter cut-off current
VEB=-4V; IC=0
-1.0 µA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
70 400
hFE-2
DC current gain
IC=-4A ; VCE=-2V
35
fT Transition frequency
IC=-1A ; VCE=-5V
130 MHz
COB Collector output capacitance
IE=0; f=1MHz ; VCB=-10V
60 pF
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=-2A; IB1=-IB2=-0.2A
VCC=25V
50 ns
450 ns
20 ns
hFE-1 Classifications
QRS
T
70-140 100-200 140-280 200-400
2

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1165
Fig.2 Outline dimensions
3