2SB1255.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SB1255 데이타시트 다운로드

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SavantIC Semiconductor
Silicon PNP Darlington Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PFa package
·Optimum for 90W Hi-Fi output
·High foward current transfer ratio hFE
·Low collector-emitter saturation voltage
·Complement to type 2SD1895
APPLICATIONS
·Power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SB1255
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICP Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-160
-140
-8
-15
-12
100
3
150
-55~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon PNP Darlington Power Transistors
www.DataSheet4U.com
Product Specification
2SB1255
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter voltage
IC=-30mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA
VBEsat
Base-emitter saturation voltage
IC=-7A ;IB=-7mA
ICBO Collector cut-off current
VCB=-160V; IE=0
ICEO Collector cut-off current
VCE=-140V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE -2
DC current gain
IC=-7A ; VCE=-5V
fT Transition frequency
IC=0.5A ; VCE=-10V;f=1MHz
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=-7A; VCC=-50V
IB1=-IB2=-7mA
MIN TYP. MAX UNIT
-140
V
-2.5 V
-3.0 V
-100
µA
-100
µA
-100
µA
2000
5000
30000
20 MHz
1.0 µs
1.5 µs
1.2 µs
hFE-2 classifications
QP
5000-15000 8000-30000
2

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SavantIC Semiconductor
Silicon PNP Darlington Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1255
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3