2SB1317.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 2SB1317 데이타시트 다운로드

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD1975
·Wide area of safe operation
·High transition frequency fT
·Optimum for the output stage of a
Hi-Fi audio amplifier
APPLICATIONS
·For high power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SB1317
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-180
-180
-5
-15
-25
3.5
150
150
-55~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1317
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-1A
-2.5 V
VBE Base-emitter on voltage
IC=-8A ; VCE=-5V
-1.8 V
ICBO Collector cut-off current
VCB=-180V; IE=0
-50 µA
IEBO Emitter cut-off current
VEB=-3V; IC=0
-50 µA
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
20
hFE-2
DC current gain
IC=-1A ; VCE=-5V
60 200
hFE-3
DC current gain
IC=-8A ; VCE=-5V
20
fT Transition frequency
IC=-0.5A ; VCE=-5V;f=1MHz
20 MHz
COB Collector output capacitance
IE=0;f=1MHz;VCB=-10V
450 pF
hFE-2 classifications
QSP
60-120 80-160 100-200
2

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1317
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1317
4