2SB1334.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SB1334 데이타시트 다운로드

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1334
DESCRIPTION
·With TO-220 package
·Complement to type 2SD1778
·Wide area of safe operation
·Low collector saturation voltage
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
PC Collector power dissipation TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE UNIT
-80 V
-60 V
-5 V
-4 A
-6 A
40 W
150
-55~150

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1334
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0
-60
V
V(BR)CBO Collector-base breakdown voltage
IC=-50µA ,IE=0
-80
V
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ,IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
-1.5 V
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.5 V
ICBO Collector cut-off current
VCB=-80V; IE=0
-10 µA
IEBO Emitter cut-off current
VEB=-4V; IC=0
-10 µA
hFE DC current gain
IC=-1A ; VCE=-5V
60 320
COB Output capacitance
IE=0 ; VCB=-10V,f=1MHz
100 pF
fT Transition frequency
IE=0.5A ; VCE=-5V
12 MHz
hFE Classifications
DE
F
60-120
100-200 160-320
2

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB1334
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3