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FJAF6812
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color Monitor
1 TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1500
750
6
12
24
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=8A, IB=2A
IC=8A, IB=2A
VCC=200V, IC=7A, RL=30
IB1= 1.4A, IB2= - 2.8A
6
10
5
1 mA
10 µA
1 mA
V
40
8
3V
1.5 V
3 µs
0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Junction to Case
Typ
1.4
Max
2.08
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001

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www.DataTSyhepet4icU.acolmCharacteristics
11
10 Ib=1.8A Ib=1.6A Ib=1.4A
9 Ib=1.2A
Ib=1.0A
8 Ib=800mA
7 Ib=600mA
6 Ib=400mA
5 Ib=200mA
4
3
2
1
0
0 2 4 6 8 10 12 14
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
100
IC = 5IB
10
125oC
1
75oC
25oC
0.1
Ta = - 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
14
VCE = 5V
12
10
8
6 125oC
4
75oC
25oC
2
Ta = - 25oC
0
0.0 0.5 1.0 1.5
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2001 Fairchild Semiconductor Corporation
100
125oC 75oC
Ta= - 25oC 25oC
10
VCE = 5V
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC Current Gain
100
IC = 3IB
10
125oC
1
75oC
0.1 25oC
Ta = - 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 4. Collector-Emitter Saturation Voltage
10
tSTG
1
0.1
RESISTIVE LOAD
Vcc = 200V
IC = 7A
IB1 = 1.4A
0.01
-0.1
-1
tF
IB2 [A], REVERSE BASE CURRENT
Figure 6. Switching Time
-10
Rev. B1, May 2001

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www.DataTSyhepet4iUc.acolmCharacteristics (Continued)
100
IC (Pulsed)
10 IC (DC)
10ms 1ms
1
TC = 25 oC
Single Pulse
300µs
0.1
0.01
1
10 100 1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
5000
Figure 7. Forward Bias Safe Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC [oC], CASE TEMPERATURE
Figure 9. Power Derating
30
10
IB1 = 1.2A, IB2 = - 4A
VBE(off) = - 3V
L = 200µH
Single Pulse
1
10 100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
5000
Figure 8. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. B1, May 2001

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www.DataPShaecet4kUa.cgome Demensions
TO-3PF
15.50 ±0.20
ø3.60 ±0.20
5.50 ±0.20
3.00 ±0.20
(1.50)
0.85 ±0.03
2.00 ±0.20
2.00 ±0.20
4.00 ±0.20
0.75
+0.20
–0.10
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
3.30 ±0.20
0.90
+0.20
–0.10
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B1, May 2001

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H2