150N10.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 150N10 데이타시트 다운로드

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HiPerFETwww.DataSheet4U.comTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFK100N10
IXFN150N10
V
DSS
I
D25
100 V 100 A
100 V 150 A
trr £ 200 ns
R
DS(on)
12 mW
12 mW
TO-264 AA (IXFK)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID120
I
DM
I
AR
EAR
dv/dt
PD
T
J
T
JM
Tstg
TL
VISOL
Md
Weight
Symbol
V
DSS
VGH(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 120°C, limited by external leads
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
IXFK
IXFN
100
100
±20
±30
100 
76
560
75
30
5
100
100
±20
±30
150
-
560
75
30
5
V
V
V
V
A
A
A
A
mJ
V/ns
500 520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 - °C
- 2500
- 3000
V~
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10 30 g
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 0 V, I = 1 mA
GS D
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
VGS = 10 V, ID = 75 A
Pulse test, t £ 300 ms, duty cycle d £ 2 %
100
2
V
4V
±200 nA
400 mA
2 mA
12 mW
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
(TAB)
G
S
S
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
q International standard packages
q JEDEC TO-264 AA, epoxy meet
UL94 V-0, flammability classification
q miniBLOC with Aluminium nitride
isolation
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Synchronous rectification
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92803G(8/96)
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IXFK 100N10
IXFN 150N10
Swywmw.bDoaltaSheetT4eUs.ctoCmonditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
RthJC
RthCK
VDS = 10 V; ID = 50 A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = 75 A
RG = 1 W (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = 75 A
TO-264 AA
TO-264 AA
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
80 S
9000
3200
1800
pF
pF
pF
30 ns
60 ns
100 ns
60 ns
360 nC
75 nC
180 nC
0.25 K/W
0.15 K/W
0.24 K/W
0.05 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
IXFK 100
IXFN 150
ISM Repetitive;
IXFK 100
pulse width limited by T IXFN 150
JM
VSD IF = 100 A, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
Q
RM
IF = 25 A
-di/dt = 100 A/ms,
IRM VR = 50 V
100 A
150 A
400 A
600 A
1.75 V
150 200 ns
0.6 mC
8A
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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www.DataSFhiege.t41U.cOomutput Characteristics
400
TJ = 25°C
350
300
VGS = 10V
9V
250
8V
200
150
7V
100
50 6V
5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.4
TJ = 25°C
1.3
1.2
VGS = 10V
1.1
1.0
VGS = 15V
0.9
0.8
0
40 80 120 160 200 240 280 320
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
175
150N10
150
125
100
100N10
75
50
25
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
© 2000 IXYS All rights reserved
IXFK 100N10
IXFN 150N10
Fig. 2 Input Admittance
300
250
200
150
100
TJ = 125°C
50 TJ = 125°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.00
1.75
1.50
1.25
ID = 75A
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
BVDSS
1.1
1.0
0.9
0.8
VGS(th)
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
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www.DataShFeiget.47U.cGomate Charge Characteristic Curve
12
VDS = 50V
10 ID = 75A
IG = 1mA
8
6
4
2
0
0 50 100 150 200 250 300 350 400
Gate Charge - nCoulombs
Fig.9 Source Current vs. Source
to Drain Voltage
150
125
100
75
TJ = 125°C
50
TJ = 25°C
25
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VSD - Volt
Fig.10 Transient Thermal Impedance
0.5
0.1
IXFK 100N10
IXFN 150N10
Fig.8 Capacitance Curves
12000
10000
f = 1MHz
VDS = 25V
8000
6000
Ciss
4000
2000
0
0
Coss
Crss
5 10 15 20
VDS - Volts
25
0.01
0.001
0.01
Time - Seconds
0.1
1
© 2000 IXYS All rights reserved
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