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CentralTM
Semiconductor Corp.
www.DataSheet4U.com
PROCESS DETAILS
Process
Die Size
Die Thickness
MT1 Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
PROCESS CPQ130
Triac
12 Amp, 600 Volt Triac Chip
GLASS PASSIVATED MESA
130 MILS x 130 MILS
8.6 MILS ± 0.6 MILS
99 MILS x 49 MILS
34 MILS x 34 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
GROSS DIE PER 4 INCH WAFER
624
PRINCIPAL DEVICE TYPES
CQ220-12B Series
CQDD-12M Series
BACKSIDE MT2
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (05-MAY 2005)