2SC1895.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SC1895 데이타시트 다운로드

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC1895
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
600
5
6
50
150
-55~150
UNIT
V
V
V
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
ICBO Collector cut-off current
VCB=750V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=2A ; VCE=10V
fT Transition frequency
IC=0.1A ; VCE=10V
Product Specification
2SC1895
MIN TYP. MAX UNIT
600 V
5V
5.0 V
1.5 V
10 µA
10 µA
8 30
2 MHz
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC1895
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3