2SC2209.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 2SC2209 데이타시트 다운로드

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·Complement to type 2SA963
·High collector power dissipation
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Product Specification
2SC2209
Absolute Maximun Ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current (DC)
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
50
40
5
1.5
3
10
150
-55~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2209
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=2mA;IB=0
40 V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
50 V
VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=150mA
1.0 V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.2A
1.5 V
ICBO Collector cut-off current
ICEO Collector cut-off current
VCB=20V; IE=0
VCE=10V; IB=0
1 µA
100 µA
IEBO Emitter cut-off current
VEB=5V; IC=0
10 µA
hFE DC current gain
IC=1A ; VCE=5V
80 220
COB Output capacitance
IE=0 ; VCB=5V;f=1MHz
50 pF
fT Transition frequency
IC=0.5A ; VCB=5V,f=200MHz
150 MHz
hFE Classifications
QR
80-160
120-220
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC2209
Fig.2 Outline dimensions
3

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2209
4