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PD - 91813
SMPS MOSFET IRFIB6N60A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
l High Voltage Isolation = 2.5KVRMS†
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
HEXFET® Power MOSFET
VDSS
600V
Rds(on) max ID
0.75W
5.5A
G DS
TO-220 FULLPAK
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
5.5
3.5
37
60
0.48
± 30
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l Single Transistor Forward
l Active Clamped Forward
Notes  through †are on page 8
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01/12/99

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IRFIB6N60A
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
600 ––– ––– V VGS = 0V, ID = 250µA
––– ––– 0.75 W VGS = 10V, ID = 3.3A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
µA VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
5.5 ––– ––– S VDS = 25V, ID = 5.5A
––– ––– 49
––– ––– 13
––– ––– 20
––– 13 –––
ID = 9.2A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 „
VDD = 300V
––– 25 ––– ns ID = 9.2A
––– 30 –––
RG = 9.1W
––– 22 –––
RD = 35.5W,See Fig. 10 „
––– 1400 –––
VGS = 0V
––– 180 –––
VDS = 25V
––– 7.1 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 1957 –––
––– 49 –––
––– 96 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
290
9.2
6.0
Units
mJ
A
mJ
RqJC
RqJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.1
65
Units
°C/W
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
––– ––– 5.5
––– ––– 37
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V „
––– 530 800 ns TJ = 25°C, IF = 9.2A
––– 3.0 4.4 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFIB6N60A
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
1
4.7V
0.1
0.1
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
10
4.7V
20µs PULSE WIDTH
TJ= 150 °C
1
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 150°C
10
TJ = 25 °C
1
0.1
4.0
V DS= 50V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 ID = 9.2A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3

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IRFIB6N60A
2400
2000
1600
1200
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
Ciss
Coss
800
400 Crss
0A
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 9.2A
16
12
VDS = 40800VV
VDS = 300V
VDS = 120V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25° C
0.1
0.2
VGS = 0 V
0.5 0.7 1.0
VSD ,Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
10
100us
1ms
1
10ms
TC = 25°C
TJ = 150° C
Single Pulse
0.1
10 100
1000
VDS , Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFIB6N60A
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5