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Advanced Power
Electronics Corp.
AP70T03GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching
RoHS Compliant
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70T03GJ) are available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
9mΩ
60A
GD
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=100
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
30
±20
60
43
195
53
0.36
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
2.8
110
Units
/W
/W
Data and specifications subject to change without notice
200823053-1/4

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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=33A
Gate Threshold Voltage
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=175oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Output Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=33A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±20V
ID=33A
VDS=20V
VGS=4.5V
VDD=15V,VGS=0V
VDS=15V
ID=33A
RG=3.3Ω,VGS=10V
RD=0.45Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.03 - V/
- - 9 mΩ
- - 18 mΩ
1 - 3V
- 35 -
S
- - 1 uA
- - 250 uA
- - ±100 nA
- 17 27 nC
- 5 - nC
- 10 - nC
- 13.5 22 nC
- 8 - ns
- 105 - ns
- 22 - ns
- 9 - ns
- 1485 2400 pF
- 245 - pF
- 170 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=33A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 27 - ns
- 20 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4

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200
T C =25 o C
150
100
10V
8.0V
6.0V
50 V G =4.0V
0
0.0 1.5 3.0 4.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I D =20A
T C =25
40
20
0
0 4 8 12 16
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
1000
100
10 T j =175 o C
T j =25 o C
1
0.1
0 0.5 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
120
T C =175 o C
90
AP70T03GH/J
10V
8.0V
6.0V
60
30 V G =4.0V
0
0.0 1.5 3.0 4.5
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D =33A
V G =10V
1.6
1.2
0.8
0.4
-50 25 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
175
2.5
2
1.5
1
0.5
-50 25 100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
175
3/4