SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=6A ;IB=1.2A
ICBO Collector cut-off current
VCB=400V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.2A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
fT Transition frequency
IC=1.2A ; VCE=10V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=7A;IB1=-IB2=1.4A
RL=28.6E,PW=20µs
VCC=200V
Product Specification
2SC3277
MIN TYP. MAX UNIT
400 V
500 V
7V
1.0 V
1.5 V
10 µA
10 µA
15 50
8
20 MHz
120 pF
1.0 µs
2.5 µs
1.0 µs
hFE-1 Classifications
LM
N
15-30
20-40
30-50
2
