2SC3336.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 2SC3336 데이타시트 다운로드

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3P(I) package
·High voltage,high speed
APPLICATIONS
·For high voltage ; high speed and
high power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3336
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
500
400
10
15
25
7.5
100
150
-55~150
UNIT
V
V
V
A
A
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3336
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,RBE=9;L=100mH
400
V
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
10
V
VCEsat Collector-emitter saturation voltage IC=7.5A; IB=1.5A
1.0 V
VBE sat Base-emitter saturation voltage
IC=7.5A; IB=1.5A
1.5 V
ICBO Collector cut-off current
VCB=400V; IE=0
50 µA
ICEO Collector cut-off current
VCE=350V; RBE=9
50 µA
hFE-1
DC current gain
IC=7.5A ; VCE=5V
12
hFE-2
DC current gain
IC=15A ; VCE=5V
5
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=15A ; VCC=150V
IB=-IB=3.0A
0.5 µs
1.5 µs
0.5 µs
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC3336
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3336
4