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PNP 三极管/PNP TRANSISTOR
特点:HFE 高 符合 RoHS 规范
FEATURES: HIGH HFE ROHS COMPLIANT
应用:通用一般放大
APPLICATION: GENERAL AMPLIFIER APPLICATION
2SA564
最大额定值 / ABSOLUTE MAXIMUM RATINGSTA=25℃)
参数/
PARAMETER
集电极-基极电压/ Collector-Base Voltage
集电极-发射极电压/Collector-Emitter Voltage
发射极-基极电压/ Emitter -Base Voltage
集电极电流/Collector current
集电极耗散功率/ Collector Power Dissipation
最高结温/Junction Temperature
贮存温度/Storage Temperature
符号/
SYMBOL
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
额定值/
RATING
-25
-25
-7
-100
400
150
-65~150
单位/
UNIT
V
V
V
mA
mW
1.Emitter 2.Collector 3.Base
电特性 / ELECTRONIC CHARACTERISTICSTA=25℃)
参数/
PARAMETER
集电极-基极截止电流/ Collector-Base Cut-off Current
发射极-基极截止电流/ Emitter- Base Cut-off Current
集电极-发射极击穿电压/ Collector-Emitter Breakdown Voltage
发射极-基极击穿电压/ Emitter -Base Breakdown Voltage
集电极-基极击穿电压/ Collector-Base Breakdown Voltage
集电极-发射极饱和电压/
Collector -Emitter Saturation Voltage
基极-发射极压降
Base-Emitter Voltage
直流放大倍数/
DC Current Gain
输出电容/ Output Capacitance
符号/
SYMBOL
ICBO
IEBO
BVCEO
BVEBO
BVCBO
测试条件/
TEST CONDITIONS
VCB=-10V,IE=0
VEB=-6V,IC=0
IC=-2mA, IB=0
IE=-10uA, IC=0
IC=-10uA, IE=0
VCE(sat) IC=-100mA, IB=-10mA,
VBE VCE=-1V IC=-100A,
HFE1 VCE=-10V,IC=-2mA
HFE2 VCE=-1V,IC=-50mA
Cob VCB=-10V IE=0 F=1MHz
HFE1 分档 / HFE1 CLASSIFICATION
最小值/
MIN
-25
-7
-25
130
70
2.5
最大值/
MAX
-100
-100
-0.5
-1.0
520
单位/
UNIT
nA
nA
V
V
V
V
V
pF
Q
130-260
R
180-360
S
260-520
索尔半导体有限公司 Suoer Semiconductor Co.Ltd.
2008.01