70N10L.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 70N10L 데이타시트 다운로드

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Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
SIPMOS=Power-Transistor
Feature
 N-Channel
 Enhancement mode
 Logic Level
175°C operating temperature
P-TO262-3-1
 Avalanche rated
 dv/dt rated
Product Summary
VDS 100 V
RDS(on) 16 m
ID 70 A
P-TO263-3-2
P-TO220-3-1
Type
SPP70N10L
SPB70N10L
SPI70N10L
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4175
Q67040-S4170
Q67060-S7428
Marking
70N10L
70N10L
70N10L
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=70 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by Tjmax
ID puls
EAS
EAR
Reverse diode dv/dt
dv/dt
IS=70A, VDS=0V, di/dt=200A/µs
Gate source voltage
VGS
Power dissipation
TC=25°C
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Page 1
Value
70
50
280
Unit
A
700 mJ
25
6 kV/µs
±20 V
250 W
-55... +175
55/175/56
°C
2001-08-24

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Preliminary data
Thermal Characteristics
Parameter
Symbol
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJC
RthJA
RthJA
SPI70N10L
SPP70N10L,SPB70N10L
Values
Unit
min. typ. max.
- - 0.6 K/W
- - 62.5
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 100
-
-
VGS=0V, ID=2mA
Gate threshold voltage, VGS = VDS
ID = 2 mA
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C
VDS=100V, VGS=0V, Tj=150°C
Gate-source leakage current
VGS(th) 1.2 1.6
2
IDSS
IGSS
- 0.1 1
- - 100
- 10 100
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=50A
Drain-source on-state resistance
VGS=10V, ID=50A
RDS(on) - 14 25
RDS(on) - 10 16
Unit
V
µA
nA
m
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2001-08-24

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Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Dynamic Characteristics
Transconductance
gfs
VDS 2*ID*RDS(on)max ,
30
ID =50A
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS=0V, VDS=25V,
f=1MHz
VDD=50V, VGS=4.5V,
ID=70A, RG=1.3
-
-
-
-
-
-
-
Values
typ. max.
65 -
3630
640
345
70
250
250
95
4540
800
430
105
375
375
145
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs VDD=80V, ID=70A
Qgd
Qg VDD=80V, ID=70A,
VGS=0 to 10V
V(plateau) VDD=80V, ID=70A
Reverse Diode
Inverse diode continuous
forward current
IS
TC=25°C
Inverse diode direct current,
pulsed
ISM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
VSD
trr
Qrr
VGS=0V, IF=140A
VR=50V, IF=lS,
diF/dt=100A/µs
- 10 15 nC
- 34 51
- 160 240
- 3.22 - V
- - 70 A
- - 280
- 1.2 1.8 V
- 100 150 ns
- 600 900 nC
Page 3
2001-08-24

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Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
1 Power dissipation
Ptot = f (TC)
SPP70N10L
280
W
2 Drain current
ID = f (TC)
parameter: VGS 10 V
SPP70N10L
75
A
240
220
200
180
160
140
120
100
80
60
40
20
00
20 40 60 80 100 120 140 160 °C 190
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 3 SPP70N10L
A tp = 18.0µs
60
55
50
45
40
35
30
25
20
15
10
5
00 20 40 60 80 100 120 140 160 °C 190
TC
4 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPP70N10L
K/W
10 0
10 2
10 1
10
0
10
-1
10 0
100 µs
1 ms
10 ms
DC
10 -1
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 1
10 2 V 10 3
VDS
10
-5
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Page 4
2001-08-24

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Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
170
SPP70N10L
Ptot = 250W
A
l
k
j
ih
g
f
140
e
120
100
80
60
40
VGS [V]
a
b
c
dd
e
f
g
h
ci
j
k
l
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
10.0
b
20
a
00 1 2 3 4 V 5.5
VDS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
80 SPP70N10L
bc d
m
60
50
40
30
20
10 VGS [V] =
bc def
3.0 3.5 4.0 4.5 5.0
ghi j
5.5 6.0 6.5 7.0
e
k gil
f
hj
kl
8.0 10.0
00 20 40 60 80 100 A 130
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS 2 x ID x RDS(on)max
parameter: tp = 80 µs
70
A
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
60
S
60
55
50
45
40
35
30
25
20
15
10
5
00 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VGS
50
45
40
35
30
25
20
15
10
5
00
10
20
30
40 A
55
ID
Page 5
2001-08-24