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Advanced Power
Electronics Corp.
AP01N60P
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
RoHS Compliant
GD
S
TO-220
Description
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,DC-AC
converters for telecom, industrial and consumer environment.
BVDSS
RDS(ON)
ID
G
600V
8Ω
1.6A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Rating
600
±30
1.6
1
6
39
0.31
13
1.6
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Max.
Max.
Value
3.2
62
Units
/W
/W
200705051-1/4

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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=0.8A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=50V, ID=0.8A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V
ID=1.6A
VDS=480V
VGS=10V
VDD=300V
ID=1.6A
RG=10Ω,VGS=10V
RD=187.5Ω
VGS=0V
VDS=25V
f=1.0MHz
600 - - V
- 0.6 - V/
- 7.2 8 Ω
2 - 4V
- 0.8 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 7.7 - nC
- 1.5 - nC
- 2.6 - nC
- 8 - ns
- 5 - ns
- 14 - ns
- 7 - ns
- 286 - pF
- 25 - pF
- 5 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25, IS=1.6A, VGS=0V
Min. Typ. Max. Units
- - 1.6 A
- - 6A
- - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A.
3.Pulse width <300us , duty cycle <2%.
2/4

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1.5
T C =25 o C
1
10V
6.0V
5.5V
5.0V
0.5
V G = 4.5 V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0.9
T C =150 o C
0.6
0.3
AP01N60P
10V
6.0V
5.5V
5.0V
V G = 4.5 V
0
0 5 10 15
V DS , Drain-to-Source Voltage (V)
20
Fig 2. Typical Output Characteristics
3
I D =0.8A
V G =10V
2
1
0
-50
0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
150
4
3
2
1
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4