2SC4928.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SC4928 데이타시트 다운로드

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4928
DESCRIPTION
·With TO-3PL package
·High speed switching
·High breakdown voltage,high current
APPLICATIONS
·Character display horizontal deflection
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IC(surge)
Collector surge current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
6
15
20
150
150
-55~150
UNIT
V
V
V
A
A
W

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4928
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=9
V(BR )EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=12A ;IB=3A
VBEsat
Base-emitter saturation voltage
IC=12A ;IB=3A
ICES Collector cut-off current
VCB=1500V; RBE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
tf Fall time
IC=1A ; VCE=5V
IC=8A ;IB1=1.4A;IB2?-2.5A
fH=31.5kHz
800
6
V
V
5.0 V
1.5 V
500 µA
500 µA
38
0.5 µs
2

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC4928
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3