2SC5130.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 2SC5130 데이타시트 다운로드

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5130
DESCRIPTION
·With TO-220F package
·High voltage.
·High speed switching
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
600
400
10
5
10
2
30
150
-55~150
UNIT
V
V
V
A
A
A
W

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5130
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=1.5A ;IB=0.3A
ICBO Collector cut-off current
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=10V; IC=0
hFE DC current gain
IC=1.5A ; VCE=4V
COB Output capacitance
IE=0; VCB=10V;f=1MHz
fT Transition frequency
IC=-0.3A ; VCE=12V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=1.5A; IB1=0.15A
IB2=-0.3A
VCC=200V ,RL=133?
MIN TYP. MAX UNIT
400 V
0.5 V
1.3 V
100 µA
10 µA
10 30
30 pF
20 MHz
1.0 µs
2.0 µs
0.3 µs
2

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC5130
Fig.2 Outline dimensions
3

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5130
4