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2SA2166
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
www.datIaSsAheHeAt4YuA.co2mSA2166 is a silicon PNP epitaxial type transistor
designed with high collector current, low VCE(sat).
FEATURE
●High collector current
IC(MAX)=-500mA
●Low collector to emitter saturation voltage
VCE(sat)<-0.4Vmax(IC=-150mA、IB=-15mA)
OUTLINE DRAWING
2.5
0.5 1.5
Unit:mm
0.5
APPLICATION
For switching application, small type motor drive application.
MAXIMUM RATINGS(Ta=25℃)
記号
VCEO
VCBO
VEBO
IC
PC
Tj
Tstg
項目
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
定格値
-60
-60
-5
-500
200
150
-55~150
単位
V
V
V
mA
mW
Notice: The dimension without
tolerance represent central
value.
TERMINAL CONNECTOR
①:BASE
EIAJ:SC-59
②:EMITTER
JEDEC:TO-236
③:COLLECTOR
Resemblance
MARKING
Type Name
A・W
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Parameter
Test condition
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
IC=-1mA、IB=0
IC=-10uA、IE=0
IE=-10uA、IC=0
VCB=-50V、IE=0
VEB=-3V、IC=0
IC=-150mA、VCE=-10V
IC=-150mA、IB=-15mA
IC=-150mA、IB=-15mA
IE=50mA、VCE=-20V、f=100MHz
VCB=-10V、f=1MHz
Limits
Min Typ Max
Unit
-60 V
-60 V
-5 V
-100 nA
-100 nA
100 300 ---
-0.4 V
-1.3 V
200 MHz
8 pF
ISAHAYA ELECTRONICS CORPORATION
20050621

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2SA2166
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COMMON EMITTER OUTPUT
www.datasheet4u.-c1o50m
-140 Ta=-40℃
-130
-120
-110
IB=-0.6mA
-100
-90
IB=-0.5mA
-80 IB=-0.4mA
-70
-60 IB=-0.3mA
-50
-40 IB=-0.2mA
-30
-20 IB=-0.1mA
-10 IB=0A
-0
-0 -2 -4 -6 -8 -10
COLLECTOR TO EMITTER VOLTAGE VCE[V]
COMMON EMITTER OUTPUT
-150
-140 Ta=-25℃
-130
-120
IB=-0.6mA
-110
-100
IB=-0.5mA
-90 IB=-0.4mA
-80
-70
-60 IB=-0.3mA
-50
-40 IB=-0.2mA
-30
-20 IB=-0.1mA
-10 IB=0A
-0
-0 -2 -4 -6 -8 -10
COLLECTOR TO EMITTER VOLTAGE VCE[V]
COMMON EMITTER OUTPUT
-150
-140 Ta=25℃
IB=-0.6mA
-130
-120
IB=-0.5mA
-110
-100
IB=-0.4mA
-90
-80 IB=-0.3mA
-70
-60
IB=-0.2mA
-50
-40
-30 IB=-0.1mA
-20
-10 IB=0A
-0
-0 -2 -4 -6 -8 -10
COLLECTOR TO EMITTER VOLTAGE VCE[V]
COMMON EMITTER OUTPUT
-150
-140 Ta=75℃
IB=-0.5mA
-130
IB=-0.6mA
-120
IB=-0.4mA
-110
-100
-90
IB=-0.3mA
-80
-70 IB=-0.2mA
-60
-50
-40 IB=-0.1mA
-30
-20
-10 IB=0A
-0
-0 -2 -4 -6 -8 -10
COLLECTOR TO EMITTER VOLTAGE VCE[V]
エミッタ接地出力特性
-150
-140
-130
-120
Ta=100℃
IB=-0.6mA
IB=-0.5mA
IB=-0.4mA
-110
-100
IB=-0.3mA
-90
-80
-70 IB=-0.2mA
-60
-50
-40 IB=-0.1mA
-30
-20
-10 IB=0A
-0
-0 -2 -4 -6 -8 -10
コレクタ・エミッタ間電圧 VCE[V]
COMMON EMITTER TRANSFER
-100
-90
-80
-70
-60
VCE=-10V
Ta=100℃
Ta=75℃
Ta=25℃
Ta=-25℃
-50 Ta=-40℃
-40
-30
-20
-10
-0
-0
-0.2 -0.4 -0.6 -0.8
BASE TO EMITTER VOLTAGE VBE[V]
-1
ISAHAYA ELECTRONICS CORPORATION
20050621

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2SA2166
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
1000
www.datasheet4u.com
DC FORWORD CURRENT GAIN
VS. COLLECTOR CURRENT
VCE=-10V
Ta=100℃
Ta=75℃
100 Ta=25℃
Ta=-25℃
Ta=-40℃
10
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
-1000
IC/IB=10/1
-100
-10
Ta=100℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=-40℃
1
-1
-10
-100
-1000
COLLECTOR CURRENT IC[mA]
BASE TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
-10
IC/IB=10/1
-1
-0.1
-1
Ta=-40℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=100℃
-10 -100
COLLECTOR CURRENT IC[mA]
COLLECTOR OUTPUT CAPATITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
Ta=25℃
IE=0A
f=1MHz
10
-1000
1
0.1
-0.1
-1 -10
COLLECTOR TO BASE VOLTAGE VCB[V]
-100
-1
-1
-10 -100
COLLECTOR CURRENT IC[mA]
-1000
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
400
Ta=25℃
350 VCE=-20V
300
250
200
150
100
50
0
1 10 100
EMITTER CURRENT IE[mA]
1000
COLLECTOR DISSIPATION
VS. AMBIENT TEMPERATURE
250
200
150
100
50
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta[℃]
ISAHAYA ELECTRONICS CORPORATION
20050621

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