61LV51216.pdf 데이터시트 (총 15 페이지) - 파일 다운로드 61LV51216 데이타시트 다운로드

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IS61LV51216
ISSI®
512K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
www.datasheet4u.com
MARCH 2005
FEATURES
• High-speed access time:
— 8, 10, and 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mA (typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
DESCRIPTION
The ISSI IS61LV51216 is a high-speed, 8M-bit static RAM
organized as 525,288 words by 16 bits. It is fabricated using
ISSI's high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields high-performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A data
byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61LV51216 is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
CE
OE CONTROL
WE CIRCUIT
UB
LB
512K x 16
MEMORY ARRAY
COLUMN I/O
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
03/10/05
1

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IS61LV51216
TRUTH TABLE
Mode
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Output Disabled
Read
Write
WE CE OE LB UB
XHXXX
HL HXX
X L XHH
HL L LH
HL LHL
HL L L L
L LX LH
L LXHL
LLXLL
ISSI®
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
High-Z
DOUT
DOUT
DIN
High-Z
DIN
High-Z
DIN
DIN
VDD Current
ISB1, ISB2
ICC
ICC
ICC
PIN CONFIGURATIONS
44-Pin TSOP (Type II)
A0 1
A1 2
A2 3
A3 4
A4 5
CE 6
I/O0 7
I/O1 8
I/O2 9
I/O3 10
VDD 11
GND 12
I/O4 13
I/O5 14
I/O6 15
I/O7 16
WE 17
A5 18
A6 19
A7 20
A8 21
A9 22
44 A17
43 A16
42 A15
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 GND
33 VDD
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 A18
27 A14
26 A13
25 A12
24 A11
23 A10
PIN DESCRIPTIONS
A0-A18
I/O0-I/O15
CE
OE
WE
LB
UB
NC
VDD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
03/10/05

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IS61LV51216
ISSI®
PIN CONFIGURATIONS
48-Pin mini BGA (9mmx11mm)
www.datasheet4u.com
1
23
45
6
A LB OE A0 A1 A2 N/C
B
I/O8
UB
A3
A4 CE I/O0
C I/O9 I/O10 A5
A6 I/O1 I/O2
D GND I/O11 A17 A7 I/O3 VDD
E VDD I/O12 GND A16 I/O4 GND
F I/O14 I/O13 A14
A15
I/O5
I/O6
G I/O15 NC A12 A13 WE I/O7
H
A18 A8
A9 A10 A11 NC
PIN DESCRIPTIONS
A0-A18
I/O0-I/O15
CE
OE
WE
LB
UB
NC
VDD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
1
2
3
4
5
6
7
ABSOLUTE MAXIMUM RATINGS(1)
8
Symbol Parameter
VTERM Terminal Voltage with Respect to GND
VDD VDD Related to GND
Value
–0.5 to VDD+0.5
–0.3 to +4.0
Unit
V
V
9
TSTG
PT
Storage Temperature
Power Dissipation
–65 to +150
1.0
°C
W
10
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
11
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
03/10/05
3

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IS61LV51216
OPERATING RANGE
Range
Commercial
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Ambient Temperature
0°C to +70°C
–40°C to +85°C
ISSI®
VDD
3.3V +10%, -5%
3.3V +10%, -5%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
VOH
VOL
VIH
VIL
ILI
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND VIN VDD
ILO Output Leakage
GND VOUT VDD
Outputs Disabled
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
Com.
Ind.
Com.
Ind.
Min.
2.4
2.2
–0.3
–1
–5
–1
–5
Max.
0.4
VDD + 0.3
0.8
1
5
1
5
Unit
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
ICC VDD Dynamic Operating
Supply Current
ISB1 TTL Standby Current
(TTL Inputs)
ISB2 CMOS Standby
Current (CMOS Inputs)
Test Conditions
VDD = Max.,
Com.
IOUT = 0 mA, f = fMAX Ind.
VDD = Max.,
VIN = VIH or VIL
CE VIH, f = 0
Com.
Ind.
VDD = Max.,
CE VDD – 0.2V,
VIN VDD – 0.2V, or
VIN 0.2V, f = 0
Com.
Ind.
-8
Min. Max.
— 110
— 120
— 30
— 35
-10
Min. Max.
— 100
— 110
— 30
— 35
-12
Min. Max.
— 90
— 100
— 30
— 35
— 20
— 25
— 20
— 25
— 20
— 25
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Unit
mA
mA
mA
4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
03/10/05

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IS61LV51216
ISSI®
CAPACITANCE(1)
Symbol
CIN
www.datasCheOeUtT4u.com
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
6
8
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
1
2
3
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
AC TEST LOADS
OUTPUT
ZO = 50
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
4
5
6
50
1.5V
30 pF
Including
jig and
scope
3.3V
319
OUTPUT
5 pF
Including
jig and
scope
353
7
8
9
10
Figure 1
Figure 2
11
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
03/10/05
5