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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1451
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPN package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VEBO
IC
PC
Tj
Emitter-base voltage
Collector current (DC)
Collector power dissipation
Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open collector
TC=25
VALUE
1500
6
1.5
50
150
-45~150
UNIT
V
V
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1451
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1.2A; IB=0.3A
VBEsat
Base-emitter saturation voltage
ICBO Collector cut-off current
hFE DC current gain
VF Diode forward voltage
IC=1.2A; IB=0.3A
VCB=1500V; IE=0
IC=0.3A ; VCE=5V
IF=1.5A
MIN TYP. MAX UNIT
6V
5.0 V
1.5 V
0.5 mA
6
2.2 V
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1451
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3