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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1553
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mP(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
5
2.5
1
40
150
-55~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.6A
ICBO Collector cut-off current
VCB=500V; IE=0
hFE DC current gain
IC=0.5A ; VCE=5V
fT Transition frequency
IC=0.1A ; VCE=10V
COB Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
VF Diode forward voltage
IF=2.5A
tf Fall time
ICP=2A ;IB1(end)=0.6A
Product Specification
2SD1553
MIN TYP. MAX UNIT
5V
5.0 8.0
V
1.5 V
10 µA
8
3 MHz
95 pF
1.6 2.0
V
0.5 1.0 µs
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1553
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3