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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1565
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20 package
·High DC current gain
·DARLINGTON
·Complement type 2SB1087
APPLICATIONS
·For low frequency power amplifier
and power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Collector current-peak
Base current
PT Total power dissipation
Open collector
TC=25
Ta=25
Tj Junction temperature
Tstg Storage temperature
VALUE
100
100
7
5
10
0.5
30
1.5
150
-55~150
UNIT
V
V
V
A
A
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=2mA
VBEsat
Base-emitter saturation voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
IC=2A; IB=2mA
VCB=100V ;IE=0
VEB=7V; IC=0
IC=2A ; VCE=2V
hFE-2
DC current gain
IC=4A ; VCE=2V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=2A; IB1=-IB2=2mA
RL=25A; VCCB50V
hFE-1 classifications
ML
K
2000-5000 4000-10000 8000-20000
Product Specification
2SD1565
MIN TYP. MAX UNIT
100 V
1.5 V
2.0 V
1.0 µA
5.0 mA
2000
20000
500
1.0 µs
3.5 µs
1.2 µs
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1565
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3