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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1677
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPN package
·High breakdown voltage
·High reliability
·Fast speed
APPLICATIONS
·For TV horizontal output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
1500
800
6
5
2.5
100
150
-55~150
UNIT
V
V
V
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A
VBEsat
Base-emitter saturation voltage
IC=4.5A ;IB=2A
ICBO Collector cut-off current
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=0.5A ; VCE=5V
Product Specification
2SD1677
MIN TYP. MAX UNIT
800 V
6V
5.0 V
1.5 V
10 µA
10 µA
8
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1677
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3