2SD2335.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SD2335 데이타시트 다운로드

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2335
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High voltage;high speed
·Built-in damper diode
APPLICATIONS
·For color TV horizontal output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
IB
PC
Tj
Tstg
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
TC=25
VALUE
1500
600
5
7
1.5
100
150
-55~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2335
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA , IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
ICBO Collector cut-off current
VCB=800V IE=0
hFE DC current gain
IC=1A ; VCE=5V
VF Diode forward voltage
IF=6A
MIN TYP. MAX UNIT
600 V
5V
5.0 V
1.5 V
10 µA
8
2.0 V
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD2335
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3