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SavantIC Semiconductor
Silicon NPN Dalington Power Transistors
Product Specification
BD643
DESCRIPTION
·With TO-220C package
www.dat·aCshoemet4pule.cmoment to type BD644
·DARLINGTON
APPLICATIONS
·For use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current-DC
ICM Collector current-Pulse
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
45
45
5
8
12
150
62.5
150
-55~150
UNIT
V
V
V
A
A
A
W
MAX
1.5
UNIT
/W

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SavantIC Semiconductor
Silicon NPN Dalington Power Transistors
Product Specification
BD643
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=0.1A, IB=0
V(BR)CBO Collector-base breakdown voltage
IC=5mA, IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=2mA, IC=0
VCEsat Collector-emitter saturation voltage IC=3A ,IB=12mA
VBE Base-emitter voltage
IC=3A , VCE=3V
ICBO Collector cut-off current
VCB=VCBMax; IE=02
ICEO Collector cut-off current
VCE=1/2 VCEMax; IB=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=3V
hFE-2
DC current gain
IC=3A ; VCE=3V
hFE-3
DC current gain
IC=6A ; VCE=3V
VF Diode forward voltage
IF=3A
fT Transition frequency
IC=3A;VCE=3V;f=1MHz
MIN TYP. MAX UNIT
45 V
45 V
5V
2.0 V
2.5 V
0.2 mA
0.5 mA
5 mA
1500
750
750
1.8 V
7 MHz
2

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SavantIC Semiconductor
Silicon NPN Dalington Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
BD643
Fig.2 Outline dimensions
3