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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD745/A/B/C
DESCRIPTION
·With TO-3PN package
www.dat·aCshoemet4pule.cmoment to type BD746/A/B/C
·High current capability
·High power dissipation
APPLICATIONS
·For use in power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
·
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD745
VCBO
Collector-base voltage
BD745A
BD745B
Open emitter
BD745C
BD745
VCEO
Collector-emitter voltage
BD745A
BD745B
Open base
BD745C
VEBO
IC
ICM
IB
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
Ta=25
VALUE
50
70
90
110
45
60
80
100
5
20
25
7
115
3.5
150
-65~150
UNIT
V
V
V
A
A
A
W

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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
BD745
V(BR)CEO
Collector-emitter
breakdown voltage
BD745A
BD745B
IC=30mA; IB=0
BD745C
VCEsat-1 Collector-emitter saturation voltage
IC=5 A;IB=0.5 A
VCEsat-2 Collector-emitter saturation voltage
IC=20 A;IB=5 A
VBE -1
Base-emitter on voltage
IC=5A ; VCE=4V
VBE -2
Base-emitter on voltage
IC=20A ; VCE=4V
BD745/A VCE=30V; IB=0
ICEO Collector cut-off current
BD745B/C VCE=60V; IB=0
BD745
VCE=50V; VBE=0
TC=125
ICBO
Collector cut-off current
BD745A
BD745B
VCE=70V; VBE=0
TC=125
VCE=90V; VBE=0
TC=125
BD745C
VCE=110V; VBE=0
TC=125
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=5A ; VCE=4V
hFE-3
DC current gain
IC=20A ; VCE=4V
Switching times resistive load
td Delay time
tr Rise time
ts Storage time
tf Fall time
IC=5 A;IB1=-IB2=0.5 A
VBE(off)=-4.2V; RL=6A
tp=20µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
2
Product Specification
BD745/A/B/C
MIN TYP. MAX UNIT
45
60
V
80
100
1.0 V
3.0 V
1.0 V
3.0 V
0.1 mA
0.1
5.0
0.1
5.0
0.1
mA
5.0
0.1
5.0
0.5 mA
40
20 150
5
0.02 µs
0.35 µs
0.5 µs
0.4 µs
MAX
1.1
UNIT
/W

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
BD745/A/B/C
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3