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2SD1113(K)
Silicon NPN Triple Diffused
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Application
Igniter
Outline
TO-220AB
2
1
23
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
1
6 k
(Typ)
450
(Typ)
3
Ratings
300
300
7
6
10
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C

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2SD1113(K)
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter sustain
voltage
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voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Note: 1. Pulse test.
Symbol
V(BR)CBO
VCEO(sus)
V(BR)EBO
I CEO
hFE
VCE(sat)
VBE(sat)
t on
t off
Min
300
300
7
500
Typ
2.0
23
Max Unit
500 V
—V
—V
100 µA
1.5 V
2.0 V
µs
µs
Test conditions
IC = 0.1 mA, IE = 0
IC = 3 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
IE = 50 mA, IC = 0
VCE = 300 V, RBE =
VCE = 2 V, IC = 4 A*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB = 40 mA*1
IC = 4 A, IB1 = –IB2 = 40 mA
IC = 4 A, IB1 = –IB2 = 40 mA
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
50
iC (peak)
10
IC (max)
1.0
0.1
Ta = 25°C
1 shot pulse
0.01
0.005
0.5 1.0 2 5 10 20 50 100200 500
Collector to emitter voltage VCE (V)
2

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Typical Output Characteristics
5
4 TC = 25°C
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1.0
0.8
0.6
2 0.4
0.2 mA
1
IB = 0
0 12345
Collector to emitter voltage VCE (V)
2SD1113(K)
10,000
DC Current Transfer Ratio
vs. Collector Current
5,000
2,000
1,000
T
=
C
75°C
25
–25
500
VCE = 2 V
Pulse
200
100
0.1
0.2 0.5 1.0 2
5
Collector current IC (A)
10
Saturation Voltage vs. Collector Current
10
lC = 200 lB
5 TC = 25°C
Pulse
2 VBE (sat)
1.0
0.5 VCE (sat)
0.2
0.1
0.1
0.2 0.5 1.0 2
5
Collector current IC (A)
10
3