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SMCT AA65N14A10
Advanced Pulse Power Device
N-MOS VCS, TO-247
Description
This voltage controlled Solidtron (VCS) discharge switch utilizes
an n-type MOS-Controlled Thyristor mounted in a five leaded TO-
247 plastic package.
www.daTstathasetheVeveCotS4ltuafg.eceaotmdurroeps
the high peak current capability and low On-
common to SCR thyristors combined with
extremely high dI/dt capability. This semiconductor is intended
for the control of high power circuits with the use of very small
amounts of input energy and is ideally suited for capacitor
discharge applications.
The industry standard TO-247 package allows for assembly of
the Solidtron using automated insertion equipment.
Package
1
5 Lead TO-247
Schematic Symbol
Anode (A)
Features
l 1400V Peak Off-State Voltage
l 65A Continuous Rating
l 6kA Surge Current Capability
l >100kA/uSec dI/dt Capability
l <150nSec Turn-On Delay
l Low On-State Voltage
l MOS Gated Control
l Low Inductance Package
Gate (G)
Gate Return (GR)
Cathode (K)
Absolute Maximum Ratings
Peak Off-State Voltage
Peak Reverse Voltage
Off-State Rate of Change of Voltage Immunity
Continuous Anode Current at 110oC
Repetitive Peak Anode Current (Pulse Width=1uSec)
Rate of Change of Current
Continuous Gate-Cathode Voltage
Peak Gate-Cathode Voltage
Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State
Maximum Junction Temperature
Maximum Soldering Temperature (Installation)
SYMBOL
VDRM
VRRM
dv/dt
IA110
IASM
dI/dt
VGKS
VGKM
VGK(OFF-MIN)
TJM
VALUE
1400
-5
5000
65
6000
125
+/-20
+/-25
-5
150
260
UNITS
V
V
V/uSec
A
A
kA/uSec
V
V
V
oC
oC
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SMCT AA65N14A10
Advanced Pulse Power Device
N-MOS VCS, TO-247
Performance Characteristics
Parameters
TJ=25oC unless otherwise specified
Symbol
Test Conditions
Min.
Anode to Cathode Breakdown Voltage
Anode-Cathode Off-State Current
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Gate-Cathode Turn-On Threshold Voltage
V(BR)
iD
VGK=-5, IA=1mA
VGE=-5V, VAK=1200V
VGK(TH) VAK=VGK, IAK=1mA
TC=25oC
TC=150oC
1400
Gate-Cathode Leakage Current
Anode-Cathode On-State Voltage
IGK(lkg)
VT
VGK=+/-20V
IT=65A, VGK=+5V
(See Figures 1,2 & 3)
TC=25oC
TC=150oC
Input Capacitance
Turn-on Delay Time
Rate of Change of Current
Peak Anode Current
Discharge Event Energy
Turn-on Delay Time
Rate of Change of Current
Peak Anode Current
Discharge Event Energy
Junction to Case Thermal Resistance
CISS
tD(ON)
dI/dt
IP
EDIS
tD(ON)
dI/dt
IP
EDIS
RθJC
0.2uF Capacitor Discharge
TJ=25oC, VGK= -5V to +5V
VAK=800V, RG=4.7
LS= 8nH (See Figures 4,5 & 6)
0.2uF Capacitor Discharge
TJ=150oC, VGK= -5V to +5V
VAK=1200V, RG=4.7
LS= 8nH (See Figures 4,5 & 6)
Anode (bottom) side cooled (Note 1.)
Measurements
Typ. Max. Units
V
<10 100
uA
250 1000
uA
0.7 V
750 nA
1.3 1.8
V
1.1 1.4
V
18 nF
82 150
nS
58 kA/uSec
3300
A
36 mJ
64 120
nS
100 kA/uSec
5200
A
74
0.035
mJ
oC/W
Typical Performance Curves (unless otherwise specified)
80
70 VGK=+5V
Pulse Duration = 250uSec.
60 Duty Cycle=<0.5%
Ty5p0ical Performance Curves
40 TJ=150oC
30
20 TJ=25oC
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VT - On-State Voltage=Volts
Figure 1. On-State Characteristics
350
300
250
200
150
100
50
0
0.0
VGK=+5V
Pulse Duration = 250uSec.
Duty Cycle=<0.5%
TJ=150oC
TJ=25oC
0.5 1.0 1.5 2.0
VT - On-State Voltage=Volts
Figure 2. On-State Characteristics
6000
5000
4000
TJ=25oC
RON = 3.5m
3000
2000
1000
0
0
TJ=150oC
RON = 3.9m
4 8 12 16
VT - On-State Voltage - V
20
Figure 3. Predicted High Current On-State Characteristics
24
2.5

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SMCT AA65N14A10
Advanced Pulse Power Device
N-MOS VCS, TO-247
Typical Performance Curves (Continued)
www.datasheet4u.com
1200
1000
See Figure 9. for Test Circuit
800 TJ=25oC RG=500
C=0.2uF RG=100
600 LS=8nH RG=50
400 RG=4.7
200
0
200
400
600
800
1000
1200
VCC - Collector (Anode) Supply Voltage-Volts
1400
Figure 4. Turn-On Delay Characteristics
RG=4.7- 500, TJ=25oC
250
See Figure 9. for Test Circuit
RG=50
200
RG=4.7
150 TJ=150oC
TJ=150oC
TJ=25oC
TJ=25oC
100
50
0
800
C=0.2uF
LS=8nH
900
1000
1100
1200
1300
VCC - Collector (Anode) Supply Voltage-V
1400
Figure 5. Turn-On Delay Characteristics
RG=4.7& 50, TJ=25oC & 150oC
100
90
80
70
60
50
40
30
20
10
0
200
TJ=25oC
C=0.2uF
RG=4.7
IP=2kA
400
IP=3kA
IP=4kA
IP=5kA
600 800 1000
VCC - Collector (Anode) Supply Voltage - V
LS=12nH
LS=25nH
LS=50nH
LS=100nH
1200
1400
Figure 6. 0.2uF Discharge Pulse Performance Characteristics (See Figure 9.)

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SMCT AA65N14A10
Advanced Pulse Power Device
N-MOS VCS, TO-247
Test Circuit and Waveforms
LSERIES (TOTAL)
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Gate
Driver
+5V
-5V
DUT
RG
C=0.2uF + Supply
- Voltage
RSENSE = 0.010
Figure 9. 0.2uF Pulsed Discharge Circuit Schematic
l LSERIES(TOTAL) is caculated using
1 / (f 2π)2C
where f = frequency of IA (See Figure 10)
l RSENSE is a calibrated
Current Viewing Resistor (CVR)
TD(ON)
10%
VGK
VAK
IA
90%
IP
dI/dt - 10% to 50% of IA
Figure 10. 0.2uF Pulsed Discharge Circuit Waveforms
0 Ref.
l The waveform shown is
representative of one produced using a
very low inductance circuit (<10nH).
0 Ref.
l VGK is held positive until IA
oscillations have ended ( IA=0).

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SMCT AA65N14A10
Advanced Pulse Power Device
N-MOS VCS, TO-247
Application Notes
www.datashAe1e.t4Uus.ecoomf Gate Return
The VCS was designed for high di/dt applications. An independent cathode connection for use as "gate return" is provided on
pin 2 to minimize the effects of rapidly changing Anode-Cathode current on the Gate control voltage, (V=L*di/dt). It is
therefore, critcal that the user utilize the Gate Return as the point at which the gate driver reference (return) is attached to the
VCS device.
Packaging and Handling
Pin 1 : Gate
Pin 2 : Gate return
Pin 3 : Anode
Pin 4 : Cathode
Pin 5 : Cathode
Pin 1
As with all MOS gated devices, proper handling
procedures must be observed to prevent electrostatic
discharge which may result in permanant damage to
the gate of the device