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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE12007
DESCRIPTION
·With TO-220 package
www.dat·aHshigeeht4vuo.clotamge
·Low saturation voltage
APPLICATIONS
Suited for line-operated switchmode
applications such as:
·Fluorescent lamp ballasts
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
IC
Emitter-base voltage
Collector current (DC)
Open collector
ICM Collector current-Peak
PD Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
1500
750
9
2.5
5
80
150
-65~150
UNIT
V
V
V
A
A
W
MAX
1.56
UNIT
/W

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE12007
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=50mA; IB=0 750 V
VCE(sat)-1 Collector-emitter saturation voltage IC=1A ;IB=0.5A
VCE(sat)-2 Collector-emitter saturation voltage IC=2A ;IB=1A
VBE(sat)-1 Base-emitter saturation voltage
IC=1A ;IB=0.5A
VBE(sat)-2 Base-emitter saturation voltage
ICEV Collector cut-off current
IEBO Emitter cut-off current
IC=2A ;IB=1A
VCEV=RatedValue; VBE(off)=-1.5V
TC=100
VEB=9V; IC=0
1.0 V
2.5 V
1.5 V
2.8 V
0.25
2.5
mA
0.25 mA
hFE-1
hFE-2
DC current gain
DC current gain
IC=1A ; VCE=5V
IC=2A ; VCE=5V
3
2.5
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
MJE12007
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3