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APTGT200A120G
Phase leg
Fast Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
VB US
Q1
G1
E1 OUT
Q2
G2
E2
0/VB US
G1 VBUS
E1
E2
G2
0/VBUS
OUT
VCES = 1200V
IC = 200A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
280
200
400
±20
890
400A @ 1100V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGT200A120G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
www.dataIsChEeSet4u.cZoemro Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1200V
350 µA
VGE =15V
IC = 200A
Tj = 25°C 1.4 1.7 2.1
Tj = 125°C
2.0
V
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
500 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
14
0.8 nF
0.6
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7
Tj = 125°C
Tj = 125°C
260
30
420
70
290
50
520
90
20
20
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1200V
IF = 200A
VGE = 0V
1200
V
Tj = 25°C
Tj = 125°C
350
600
µA
Tc = 80°C
200
A
Tj = 25°C
Tj = 125°C
1.6 2.1
1.6
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 200A
VR = 600V
di/dt =2500A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
170
280
18
36
10
18
ns
µC
mJ
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APTGT200A120G
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
www.dataVsIhSeOeLt4u.cRoMmS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
TSTG Storage Temperature Range
TC Operating Case Temperature
Torque Mounting torque
To heatsink
For terminals
M6
M5
Wt Package Weight
SP6 Package outline (dimensions in mm)
Min Typ Max Unit
0.14
0.25
°C/W
2500
V
-40 150
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGT200A120G
Typical Performance Curve
Output Characteristics (VGE=15V)
400
www.datasheet4u.com 300
TJ=25°C
TJ=125°C
200
100
Output Characteristics
400
TJ = 125°C
300 VGE=17V
VGE=13V
VGE=15V
200
VGE=9V
100
0
01234
VCE (V)
0
0 12 3 4
VCE (V)
400
350
300
250
200
150
100
50
0
5
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
6 7 8 9 10 11 12
VGE (V)
Switching Energy Losses vs Gate Resistance
50
VCE = 600V
40 VGE =15V
IC = 200A
TJ = 125°C
30
Eon
Eoff
20 Er
10
0
0 4 8 12 16 20
Gate Resistance (ohms)
Energy losses vs Collector Current
50
VCE = 600V
Eon
40 VGE = 15V
RG = 2.7
Eoff
30 TJ = 125°C
Er
20 Eon
10
0
0 50 100 150 200 250 300 350 400
IC (A)
Reverse Bias Safe Operating Area
450
400
350
300
250
200
150 VGE=15V
100 TJ=125°C
50 RG=2.7
0
0 300 600 900 1200 1500
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14 0.9
IGBT
0.12
0.7
0.1
0.08 0.5
0.06 0.3
0.04
0.1
0.02 0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
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APTGT200A120G
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Operating Frequency vs Collector Current
60
50
ZVS
40
30 ZCS
VCE=600V
D= 50%
RG=2.7
TJ=125°C
Tc=75°C
20
10 Hard
switching
0
0 40
80
120 160 200 240 280
IC (A)
400
350
300
250
200
150
100
50
0
0
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ =125°C
0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.25 0.9
0.2 0.7
0.15 0.5
0.1 0.3
Diode
0.05 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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