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APTGT200A60TG
Phase leg
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
VBUS
NT C2
Q1
G1
E1
Q2
G2
OUT
E2
0/VBU S
NT C1
VCES = 600V
IC = 200A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
VBUS
E1
G1
G2
E2
0/VBUS
E2
G2
OUT
OUT
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
290
200
400
±20
625
400A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGT200A60TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
www.dataIsChEeSet4u.cZoemro Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 200A
Tj = 25°C
Tj = 150°C
1.5 1.9
1.7
V
VGE = VCE , IC = 2 mA
5.0 5.8 6.5 V
VGE = 20V, VCE = 0V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
12.3
0.8 nF
0.4
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 2
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 2
VGE = ±15V
VBus = 300V
IC = 200A
RG = 2
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
115
45
225
55
130
50
300
70
1
1.8
5.7
7
ns
ns
mJ
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 150°C
600
V
250
500
µA
IF DC Forward Current
Tc = 80°C
200
A
VF Diode Forward Voltage
IF = 200A
VGE = 0V
Tj = 25°C
Tj = 150°C
1.6 2
1.5
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 200A
VR = 300V
di/dt =2200A/µs
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
130
225
9
19
ns
µC
Er Reverse Recovery Energy
Tj = 25°C
Tj = 150°C
2.3
4.7
mJ
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APTGT200A60TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ
R25 Resistance @ 25°C
B 25/85 T25 = 298.15 K
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RT
= R25
exp
B
25
/
85

1
T25
1
T

T: Thermistor temperature
RT: Thermistor value at T
50
3952
Max
Unit
k
K
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
VISOL
TJ
TST G
TC
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
M5
Wt Package Weight
Min Typ Max Unit
0.24
0.4
°C/W
2500
V
-40 175
-40 125 °C
-40 100
2.5 4.7 N.m
160 g
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTGT200A60TG
Typical Performance Curve
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400
350
300
250
200
150
100
50
0
0
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
TJ=150°C
TJ=25°C
0.5 1 1.5 2 2.5 3
VCE (V)
Output Characteristics
400
350 TJ = 150°C
VGE= 19V
300
250 VGE=13V
200 VGE=15V
150
100 VGE=9V
50
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
400
350
300
250
200
150
100
50
0
5
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=150°C
TJ=25°C
6 7 8 9 10 11
VGE (V)
12
Energy losses vs Collector Current
14
VCE = 300V
12 VGE = 15V
10
RG = 2
TJ = 150°C
8
6
Eoff
Er
4
2
Eon
0
0 50 100 150 200 250 300 350 400
IC (A)
Switching Energy Losses vs Gate Resistance
16
VCE = 300V
VGE =15V
12 IC = 200A
TJ = 150°C
Eoff
Eon
8
4 Eon
Er
0
0 2 4 6 8 10 12 14
Gate Resistance (ohms)
Reverse Bias Safe Operating Area
500
400
300
200
100
VGE=15V
TJ=150°C
RG=2
0
0 100 200 300 400 500 600 700
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
0.9
0.2
0.7
IGBT
0.15 0.5
0.1 0.3
0.05 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
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APTGT200A60TG
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Operating Frequency vs Collector Current
120
100 ZVS
ZCS
80
VCE= 300V
D=50%
RG=2
TJ =150°C
Tc=85°C
60
40
20
Hard
switching
0
0 50 100 150 200 250
IC (A)
400
350
300
250
200
150
100
50
0
0
Forward Characteristic of diode
TJ =125°C
TJ=150°C
TJ =25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4 0.9
Diode
0.35
0.3 0.7
0.25 0.5
0.2
0.15 0.3
0.1 0.1
0.05 0.05
0
Single Pulse
0.00001
0.0001
0. 001
0.01
0.1
1
Rectangular Pulse Duration in Seconds
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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