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APTGT300DA170G
Boost chopper
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
VCES = 1700V
IC = 300A @ Tc = 80°C
VBUS
CR1
OUT
Q2
G2
E2
0/VBUS
VBUS
E2
G2
0/VBUS
OUT
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
400
300
600
±20
1660
600A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGT300DA170G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
www.dataIsChEeSet4u.cZoemro Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1700V
750 µA
VGE = 15V
IC = 300A
Tj = 25°C
Tj = 125°C
2.0 2.4
2.4
V
VGE = VCE , IC = 5mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
26.5
1.1 nF
0.88
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 300A
RG = 2.2
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 300A
RG = 2.2
VGE = 15V
VBus = 900V
IC = 300A
RG = 2.2
Tj = 125°C
Tj = 125°C
370
40
650
180
400
50
800
300
96
94
ns
ns
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1700V
Tj = 25°C
Tj = 125°C
1700
750
1000
V
µA
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 300A
IF = 300A
VR = 900V
di/dt =3200A/µs
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
300 A
1.8 2.2
1.9
V
385 ns
490
76 µC
124
35 mJ
70
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APTGT300DA170G
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
www.dataVsIhSeOeLt4u.cRoMmS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
TSTG Storage Temperature Range
TC Operating Case Temperature
Torque Mounting torque
To heatsink
For terminals
M6
M5
Wt Package Weight
Min Typ Max Unit
0.075
0.14
°C/W
3500
V
-40 150
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGT300DA170G
Typical Performance Curve
Output Characteristics (VGE=15V)
600
500
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400
300
TJ=25°C
TJ= 125°C
200
100
0
01234
VCE (V)
Transfert Characteristics
600
500 TJ=25°C
400
300 TJ=125°C
200
100 TJ=125°C
0
5 6 7 8 9 10 11 12 13
VGE (V)
Switching Energy Losses vs Gate Resistance
240
200
VCE = 900V
VGE =15V
160
IC = 300A
TJ = 125°C
Eon
120 Eoff
80
Er
40
0
0 3 6 9 12 15
Gate Resistance (ohms)
Output Characteristics
600
TJ = 125°C
500
VGE=20V
400
VGE=13V
300
VGE=15V
200
100 VGE=9V
0
0 1 23 4 5
VCE (V)
Energy losses vs Collector Current
240
200
VCE = 900V
VGE = 15V
Eon
160
RG = 2.2
TJ = 125°C
Eoff
120
Er
80
40
0
0 100 200 300 400 500 600
IC (A)
Reverse Bias Safe Operating Area
700
600
500
400
300
200
100
V GE=15V
TJ=125°C
RG= 2. 2
0
0 400
800 1200
VCE (V)
1600
2000
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
0.07 0.9
IGBT
0.06
0.05
0.7
0.04 0.5
0.03 0.3
0.02
0.01 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
10
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APTGT300DA170G
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Operating Frequency vs Collector Current
20
VCE=900V
D=50%
15 RG=2.2
ZVS
TJ= 125°C
TC=75°C
10
ZCS
5
hard
switching
0
0 80 160 240 320 400 480
IC (A)
Forward Characteristic of diode
600
500
TJ= 25°C
400
300
200
100 TJ=125°C
TJ=125°C
0
0 0.5 1 1.5 2 2.5
VF (V)
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0. 16
0.14 0.9
Diode
0. 12
0.1 0.7
0.08 0.5
0.06 0.3
0. 04
0.02 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0. 1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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