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APTGT300A60G
Phase leg
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
VCES = 600V
IC = 300A @ Tc = 80°C
VB US
Q1
G1
E1 OUT
Q2
G2
E2
0/VB US
G1 VBUS
E1
E2
G2
0/VBUS
OUT
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
430
300
500
±20
1150
600A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APT website – http://www.advancedpower.com
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APTGT300A60G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
www.dataIsChEeSet4u.cZoemro Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
350 µA
VGE =15V
IC = 300A
Tj = 25°C
Tj = 150°C
1.4 1.8
1.5
V
VGE = VCE , IC = 1.5 mA
5.0 5.8 6.5 V
VGE = 20V, VCE = 0V
500 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
24
1.5 nF
0.75
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 300A
RG = 1.8
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 300A
RG = 1.8
115
45
200
55
120
50
250
70
ns
ns
VGE = ±15V
VBus = 300V
IC = 300A
RG = 1.8
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
1.5
2.7
8.55
10.5
mJ
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
600
VR=600V
Tj = 25°C
Tj = 150°C
Tc = 80°C
150
400
300
IF = 300A
VGE = 0V
Tj = 25°C
Tj = 150°C
1.5 1.9
1.4
Tj = 25°C
130
IF = 300A
VR = 300V
di/dt =3100A/µs
Tj = 150°C
Tj = 25°C
Tj = 150°C
225
13.5
28.5
Tj = 25°C
3.5
Tj = 150°C
7.1
V
µA
A
V
ns
µC
mJ
APT website – http://www.advancedpower.com
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APTGT300A60G
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
www.dataVsIhSeOeLt4u.cRoMmS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
TJ Operating junction temperature range
TSTG Storage Temperature Range
TC Operating Case Temperature
Torque Mounting torque
To heatsink
For terminals
M6
M5
Wt Package Weight
Min Typ Max Unit
0.13
0.21
°C/W
2500
V
-40 175
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APT website – http://www.advancedpower.com
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APTGT300A60G
Typical Performance Curve
600
500
www.datasheet4u.com
400
300
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
TJ =150°C
200
100
TJ= 25°C
0
0 0.5 1 1.5 2 2.5
VCE (V)
Output Characteristics
600
TJ = 150°C
500
VGE=13V
400
VGE=19V
VGE=15V
300 VGE=9V
200
100
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
600
500
400
300
200
100
0
5
Transfert Characteristics
TJ=25°C
TJ =125°C
TJ=150°C
TJ=25°C
6 7 8 9 10 11
VGE (V)
20
17.5
15
12.5
Energy losses vs Collector Current
VCE = 300V
VGE = 15V
RG = 1.8
TJ = 150°C
Eoff
Er
10
7.5
5
2.5
0
0
Eon
100 200 300 400 500 600
IC (A)
Switching Energy Losses vs Gate Resistance
20
VCE = 300V
VGE =15V
15 IC = 300A
TJ = 150°C
E of f
Eon
10
5 Er
E on
0
0 2 4 6 8 10 12
Gate Resistance (ohms)
Reverse Bias Safe Operating Area
700
600
500
400
300
200 VGE=15V
100 TJ=150°C
RG=1.8
0
0 100 200 300 400 500 600 700
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.14
0.12 0.9
IGBT
0.1 0.7
0.08 0.5
0.06 0.3
0.04
0.02 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
APT website – http://www.advancedpower.com
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APTGT300A60G
www.datasheet4u.com
Operating Frequency vs Collector Current
120
VCE=300V
100 D=50%
ZCS ZVS
80
RG=1.8
TJ =150°C
Tc=85°C
60
40
20 Hard
switching
0
0 100 200 300 400 500
IC (A)
Forward Characteristic of diode
600
500
400
300
200
100
0
0
TJ=125°C
TJ=150°C
TJ =25°C
0.4 0.8 1.2 1.6
VF (V)
2
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
Diode
0.2 0.9
0.15
0.7
0.5
0.1
0.3
0.05 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
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