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APTGT30DDA60T3G
Dual Boost chopper
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
13 14
CR1 CR2
22 7
23 8
Q1 Q2
26
27
4
3
29 30
15
31 32
R1 16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VCES = 600V
IC = 30A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Each leg can be easily paralleled to achieve a
single boost of twice the current capability.
RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 150°C
Max ratings
600
50
30
60
±20
90
60A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGT30DDA60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
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ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
250 µA
VGE =15V
IC = 30A
Tj = 25°C
Tj = 150°C
1.5 1.9
1.7
V
VGE = VCE , IC = 400µA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
300 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10
VGE = ±15V
VBus = 300V
IC = 30A
RG = 10
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
1600
110
50
110
45
200
40
120
50
250
60
0.16
0.3
0.7
1.05
pF
ns
ns
mJ
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 150°C
600
V
250
500
µA
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 30A
VGE = 0V
IF = 30A
VR = 300V
di/dt =1800A/µs
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
30
1.6 2
1.5
100
150
1.5
3.1
0.34
0.75
A
V
ns
µC
mJ
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APTGT30DDA60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ
R25 Resistance @ 25°C
B 25/85 T25 = 298.15 K
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RT
= R25
exp
B
25
/
85

1
T25
1
T

T: Thermistor temperature
RT: Thermistor value at T
50
3952
Max
Unit
k
K
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
VISOL
TJ
TST G
TC
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M4
Wt Package Weight
SP3 Package outline (dimensions in mm)
Min Typ Max Unit
1.6
2.45
°C/W
2500
V
-40 175
-40 125 °C
-40 100
2.5 4.7 N.m
110 g
1 12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGT30DDA60T3G
Typical Performance Curve
60
50
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40
30
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
TJ=150°C
20
10
0 TJ=25°C
0 0.5 1 1.5 2 2.5 3
VCE (V)
Output Characteristics
60
TJ = 150°C
VGE=19V
50
40 VGE=13V
30 VGE=15V
20
VGE=9V
10
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
60
50
40
30
20
10
0
5
Transfert Characteristics
TJ=25°C
TJ =125°C
TJ=150°C
TJ =25°C
6 7 8 9 10 11 12
VGE (V)
Energy losses vs Collector Current
2
VCE = 300V
VGE = 15V
1.5 RG = 10
TJ = 150°C
Eoff
1 Er
0.5 Eon
0
0 10 20 30 40 50 60
IC (A)
Switching Energy Losses vs Gate Resistance
2.5
VCE = 300V
2
VGE =15V
IC = 30A
TJ = 150°C
1.5
Eoff
Eon
1
0.5
0
0
Er
Eon
10 20 30 40 50 60 70
Gate Resistance (ohms)
Reverse Bias Safe Operating Area
70
60
50
40
30
20 VGE=15V
10 TJ=150°C
RG=10
0
0 100 200 300 400 500 600 700
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.8
1.6 0.9
1.4
1.2 0.7
IGBT
1 0.5
0.8
0.6 0.3
0.4 0.1
0.2 0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
Rectangular Pulse Duration in Seconds
10
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APTGT30DDA60T3G
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Operating Frequency vs Collector Current
120
100
ZCS
80 ZVS
60
V CE =300V
D=50%
RG=10
TJ=150°C
Tc=85°C
40
20
0
0
Hard
switching
10
20
IC (A)
30
40
60
50
40
30
20
10
0
0
Forward Characteristic of diode
TJ=125°C
TJ=150°C
TJ=25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
3
Diode
2.5 0.9
2 0.7
1.5 0.5
1 0.3
0.5 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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