STPS2045CF.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 STPS2045CF 데이타시트 다운로드

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® STPS2045CT/CF/CG/CFP
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
2 x 10 A
45 V
175 °C
0.57 V
A1
K
A2
FEATURES AND BENEFITS
s VERY SMALL CONDUCTION LOSSES
s NEGLIGIBLE SWITCHING LOSSES
s EXTREMELY FAST SWITCHING
s INSULATED PACKAGE: ISOWATT220AB,
TO-220FPAB
Insulating voltage = 2000V DC
Capacitance = 12pF
DESCRIPTION
Dual center tap Schottky rectifier suited for
SwitchMode Power Supply and high frequency DC
to DC converters.
Packaged either in TO-220AB, ISOWATT220AB,
TO-220FPAB or D2PAK, this device is especially
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
A2
K
A1
TO-220AB
STPS2045CT
K
A2
K
A1
ISOWATT220AB
STPS2045CF
A2
A1
D2PAK
STPS2045CG
A2
K
A1
TO-220FPAB
STPS2045CFP
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward TO-220AB / D2PAK
current δ = 0.5
ISOWATT220AB
TO-220FPAB
Tc = 155°C Per diode
Tc = 125°C Per device
45
30
10
20
V
A
A
IFSM
IRRM
Surge non repetitive forward current
Repetitive peak reverse current
tp = 10 ms sinusoidal
tp = 2 µs square
F = 1kHz
180 A
1A
IRSM
Tstg
Non repetitive peak reverse current
Storage temperature range
tp = 100 ms square
2A
-65 to +175 °C
Tj Maximum operating junction temperature *
175 °C
dV/dt Critical rate of rise of reverse voltage
10000 V/µs
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j a)
August 2002 - Ed: 3E
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STPS2045CT/CF/CG/CFP
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Parameter
TO-220AB / D2PAK
Rth (c)
ISOWATT220AB
TO-220FPAB
TO-220AB / D2PAK
ISOWATT220AB
TO-220FPAB
When the diodes 1 and 2 are used simultaneously:
Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Value Unit
Per diode 2.2 °C/W
Total
1.3
Per diode
Total
4.5
3.5
Coupling 0.3
2.5
Symbol
Parameter
IR * Reverse leakage current
VF * Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 125°C IF = 10 A
Tj = 25°C
IF = 20 A
Tj = 125°C IF = 20 A
Min. Typ. Max.
100
7 15
0.5 0.57
0.84
0.65 0.72
Unit
µA
mA
V
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.015 IF2(RMS)
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Fig. 1: Average forward power dissipation versus
average forward current (per diode).
STPS2045CT/CF/CG/CFP
Fig. 2: Average current versus ambient
temperature (δ=0.5, per diode).
PF(av)(W)
8
δ = 0.1 δ = 0.2
7 δ = 0.05
6
5
4
3
2
1 IF(av) (A)
0
01234567
δ = 0.5
δ=1
T
δ=tp/T
tp
8 9 10 11 12
IF(av)(A)
12
10
8
6
4
T
2
δ=tp/T
0
0 25
tp
50
Rth(j-a)=Rth(j-c)
ISOWATT220AB
TO-220FPAB
Rth(j-a)=15°C/W
TO-220AB
D²PAK
Tamb(°C)
75 100 125 150 175
Fig. 3-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB and D2PAK).
Fig. 3-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
IM(A)
140
120
100
80
60
40
IM
20
0
1E-3
t
δ=0.5 t(s)
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
IM(A)
100
80
60
40
IM
20
t
δ=0.5
t(s)
0
1E-3
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
Fig. 4-1: Relative variation of thermal transient
impedance junction to case versus pulse duration
(TO-220AB and D2PAK).
Fig. 4-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2 δ = 0.2
δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2 δ = 0.2
δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
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STPS2045CT/CF/CG/CFP
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(µA)
5E+4
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
05
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
10 15 20 25 30 35 40 45
C(pF)
1000
500
200
100
1
2
F=1MHz
Tj=25°C
VR(V)
5 10
20
50
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm).
IFM(A)
100.0
Tj=125°C
Typical values
10.0
Tj=25°C
1.0
Tj=125°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10 S(Cu) (cm²)
0
0 5 10 15 20 25 30 35 40
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STPS2045CT/CF/CG/CFP
PACKAGE MECHANICAL DATA
D2PAK
L2
L
L3
A
E
C2
D
A1
B2
B
G
C
A2
R
M*
V2
* FLAT ZONE NO LESS THAN 2mm
FOOTPRINT DIMENSIONS (in millimeters)
REF.
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
4.40 4.60 0.173 0.181
2.49 2.69 0.098 0.106
0.03 0.23 0.001 0.009
0.70 0.93 0.027 0.037
1.14 1.70 0.045 0.067
0.45 0.60 0.017 0.024
1.23 1.36 0.048 0.054
8.95 9.35 0.352 0.368
10.00 10.40 0.393 0.409
4.88 5.28 0.192 0.208
15.00 15.85 0.590 0.624
1.27 1.40 0.050 0.055
1.40 1.75 0.055 0.069
2.40 3.20 0.094 0.126
0.40 typ.
0.016 typ.
0° 8° 0° 8°
16.90
10.30
8.90
5.08
1.30
3.70
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