LR7821.pdf 데이터시트 (총 11 페이지) - 파일 다운로드 LR7821 데이타시트 다운로드

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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 94538B
IRLR7821
IRLU7821
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 10m
10nC
D-Pak
IRLR7821
I-Pak
IRLU7821
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes  through … are on page 11
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Max.
30
± 20
65f
47f
260
75
37.5
0.50
-55 to + 175
Units
V
A
W
W/°C
°C
Typ.
–––
–––
–––
Max.
2.0
50
110
Units
°C/W
1
4/5/04

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IRLR/U7821
www.datasheet4uS.cotmatic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
––– ––– V VGS = 0V, ID = 250µA
23 ––– mV/°C Reference to 25°C, ID = 1mA
f7.5 10 mVGS = 10V, ID = 15A
9.5 12.5
fVGS = 4.5V, ID = 12A
VGS(th)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.0 ––– ––– V VDS = VGS, ID = 250µA
––– -5.3 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
46 ––– ––– S VDS = 15V, ID = 12A
Qg Total Gate Charge
––– 10 14
Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.0 ––– VDS = 16V
Qgs2
Post-Vth Gate-to-Source Charge
––– 1.2 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge
––– 2.5 –––
ID = 12A
Qgodr
Gate Charge Overdrive
––– 4.3 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 3.7 –––
Qoss
td(on)
Output Charge
Turn-On Delay Time
––– 8.5 ––– nC VDS = 16V, VGS = 0V
––– 11 –––
fVDD = 15V, VGS = 4.5V
tr Rise Time
––– 4.2 –––
ID = 12A
td(off)
Turn-Off Delay Time
––– 10 ––– ns Clamped Inductive Load
tf Fall Time
––– 3.2 –––
Ciss Input Capacitance
––– 1030 –––
VGS = 0V
Coss Output Capacitance
––– 360 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 120 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dhEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
230
12
7.5
Units
mJ
A
mJ
Diode Characteristics
fParameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 65
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ùh(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
2
––– ––– 260
A showing the
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
fV TJ = 25°C, IS = 12A, VGS = 0V
f––– 26 38 ns TJ = 25°C, IF = 12A, VDD = 15V
––– 15 23 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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10000
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
IRLR/U7821
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
10
1
0.1
0.1
2.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
1
0.1
2.5V
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175 ° C
10
1
2.0
TJ = 25 ° C
V DS= 15V
20µs PULSE WIDTH
4.0 6.0
V GS, Gate-to-Source Voltage (V)
8.0
10.0
Fig 3. Typical Transfer Characteristics
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2.0
ID = 65A
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (°C) °
Fig 4. Normalized On-Resistance
vs. Temperature
3

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IRLR/U7821
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10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100 Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6
ID= 12A
5
4
VDS= 24V
VDS= 16V
3
2
1
0
0 2 4 6 8 10 12
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
TJ= 175 ° C
10
TJ= 25 ° C
1
0.1
0.0
V GS = 0 V
0.5 1.0 1.5
V SD,Source-to-Drain Voltage (V)
2.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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70
60
50
40
30
20
10
0
25
LIMITED BY PACKAGE
50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current vs.
Case Temperature
IRLR/U7821
2.5
2.0
ID = 250µA
1.5
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
1 D = 0.50
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5