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Ordering number:ENN2063A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1143/2SD1683
www.datasheet4u.com
50V/4A Switching Applications
Applications
· Voltage regulators, relay drivers, lamp drivers,
electrical equipment.
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity and wide ASO.
Package Dimensions
unit:mm
2042B
[2SB1143/2SD1683]
8.0
4.0
1.0 1.0
3.3
3.0
1.6
0.8
0.8
0.75 0.7
( ) : 2SB1143
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
123
2.4
4.8
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()40V, IE=0
Emitter Cutoff Current
IEBO VEB=()4V, IC=0
DC Current Gain
hFE1
hFE2
VCE=()2V, IC=()100mA
VCE=()2V, IC=()3A
Gain-Bandwidth Product
fT VCE=()10V, IC=()50mA
* ; The 2SB1143/2SD1683 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE 100 to 200 140 to 280 200 to 400
U
280 to 560
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
()60
()50
()6
()4
()6
1.5
10
150
55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
()1 µA
()1 µA
100*
560*
40
150 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2003TN (KOTO)/92098HA (KT)/4137KI/D176TA, TS No.2063–1/4

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Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
www.daBtasseh-teoe-Etm4iutt.ecr oSmaturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SB1143/2SD1683
Symbol
Conditions
Cob VCB=()10V, f=1MHz
VCE(sat) IC=()2A, IB=()100mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=()2A, IB=()100mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.1%
IB1
IB2
OUTPUT
INPUT
VR
50
RB
+
100µF
RL
25
+
470µF
VBE= --5V
VCC=25V
IC=10IB1= --10IB2=1A
(For PNP, the porarity is reversed.)
Ratings
min typ
(39)25
(350)
190
()0.94
()60
()50
()6
(70)70
(450)
650
(30)35
max
(700)
500
()1.2
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
--5
2SB1143
--4
--3
IC -- VCE
--200mA
--100mA
--50mA
--20mA
--2
--10mA
--1 --5mA
0
0
--2.0
--1.6
--1.2
--0.8
--0.4
IB=0
--0.4 --0.8 --1.2 --1.6 --2.0
Collector-to-Emitter Voltage, VCE – V ITR09047
IC -- VCE
--14mA
--12mA
--10mA
2SB1143
--8mA
--6mA
--4mA
--2mA
0 IB=0
0 --4 --8 --12 --16 --20
Collector-to-Emitter Voltage, VCE – V ITR09049
5
2SD1683
4
3
2
1
IC -- VCE
100mA
80mA
60mA
40mA
20mA
10mA
5mA
0 IB=0
0 0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, VCE – V ITR09048
IC -- VCE
2.0
8mA
2SD1683
7mA
1.6
6mA
1.2 5mA
4mA
0.8 3mA
2mA
0.4
1mA
0 IB=0
0 4 8 12 16 20
Collector-to-Emitter Voltage, VCE – V ITR09050
No.2063–2/4

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2SB1143/2SD1683
IC -- VBE
IC -- VBE
--4.8 4.8
2SB1143
2SD1683
VCE= --2V
VCE=2V
--4.0 4.0
--3.2
w w w . d a t a s h e-e-2t.44 u . c o m
3.2
2.4
--1.6 1.6
--0.8
0
0
1000
7
5
3
2
100
7
5
3
2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE – V ITR09051
hFE -- IC
2SB1143
VCE= --2V
Ta=75°C
25°C
--25°C
10
7 --0.01
1000
7
5
2 3 5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC – A
f T -- IC
23 5
ITR09053
2SB1143 / 2SD1683
VCE=10V
3
2 2SD1683
100 2SB1143
7
5
3
2
10 For PNP, minus sign is omitted.
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC – A
ITR09055
VCE(sat) -- IC
5
2SB1143
3 IC / IB=20
2
--1000
7
5
3
2
--100
7
5
3
2
25°C
Ta=
--25°C
75°C
--10
7 --0.01
2 3 5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC – A
23 5
ITR09057
0.8
0
0
1000
7
5
3
2
100
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE – V ITR09052
hFE -- IC
2SD1683
VCE=2V
Ta=75°C
25°C
--25°C
10
7 0.01
5
3
2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC – A
23 5
ITR09054
Cob -- VCB
2SB1143 / 2SD1683
f=1MHz
2
100
7
5 2SB1143
3 2SD1683
2
10
1.0
23
For PNP, minus sign is omitted.
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V ITR09056
VCE(sat) -- IC
5
2SD1642
3 IC / IB=20
2
1000
7
5
3
2
100
7
5 25°C
3 Ta=75°C
2 --25°C
10
7 0.01
2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC – A
23 5
ITR09058
No.2063–3/4