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BLA6H0912-500
LDMOS avionics radar power transistor
Rev. 01 — 5 March 2009
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1. Product profile
Objective data sheet
1.1 General description
500 W LDMOS power transistor intended for avionics transmitter applications in the
960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.
Table 1. Test information
Typical RF performance at Tcase = 25 °C; tp = 128 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(MHz)
VDS PL
Gp
ηD tr
tf
(V) (W) (dB) (%) (ns) (ns)
pulsed RF
960 to 1200
50 500 17
50 20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply
voltage of 50 V, an IDq of 100 mA, a tp of 128 µs with δ of 10 %:
N Output power = 500 W
N Power gain = 17 dB
N Efficiency = 50 %
I Easy power control
I Integrated ESD protection
I High flexibility with respect to pulse formats
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (960 MHz to 1215 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)

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BLA6H0912-500
LDMOS avionics radar power transistor
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1.3 Applications
I L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
[1]
3
2
1
2
3
sym112
Table 3. Ordering information
Type number Package
Name Description
BLA6H0912-500 -
flanged ceramic package; 2 mounting holes; 2 leads
Version
SOT634A
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 100 V
0.5 13 V
- 54 A
65 +150 °C
- 200 °C
5. Thermal characteristics
Table 5.
Symbol
Zth(j-c)
Thermal characteristics
Parameter
transient thermal impedance from
junction to case
Conditions
Tcase = 85 °C; PL = 500 W
tp = 100 µs; δ = 10 %
tp = 200 µs; δ = 10 %
tp = 300 µs; δ = 10 %
tp = 100 µs; δ = 20 %
Typ Unit
<tbd> K/W
<tbd> K/W
<tbd> K/W
<tbd> K/W
BLA6H0912-500_1
Objective data sheet
Rev. 01 — 5 March 2009
© NXP B.V. 2009. All rights reserved.
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BLA6H0912-500
LDMOS avionics radar power transistor
6. Characteristics
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Table 6. DC characteristics
Tj = 25 °C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS
VGS(th)
IDSS
IDSX
IGSS
gfs
RDS(on)
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
VGS = 0 V; ID = 2.7 mA
VDS = 10 V; ID = 270 mA
VGS = 0 V; VDS = 50 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 270 mA
VGS = VGS(th) + 3.75 V;
ID = 9.5 A
Min Typ Max Unit
100 -
-V
1.3 1.8 2.2 V
- - 1.1 µA
48 54 - A
- - 110 nA
<tbd> <tbd> - S
- 67 120 m
Table 7. RF characteristics
Mode of operation: pulsed RF; tp = 128 µs; δ = 10 %; RF performance at VDS = 50 V; IDq = 100 mA;
Tcase = 25 °C; unless otherwise specified, in a class-AB production test circuit.
Symbol Parameter
Conditions Min Typ Max Unit
PL
VCC
Gp
RLin
ηD
Pdroop(pulse)
tr
tf
output power
supply voltage
power gain
input return loss
drain efficiency
pulse droop power
rise time
fall time
PL = 500 W
PL = 500 W
PL = 500 W
PL = 500 W
PL = 500 W
PL = 500 W
PL = 500 W
500 - -
W
- - 50 V
15 17 -
dB
- 10 -
dB
45 50 -
%
- 0 0.3 dB
- 20 50 ns
- 6 50 ns
6.1 Ruggedness in class-AB operation
The BLA6H0912-500 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V;
IDq = 100 mA; PL = 500 W; tp = 128 µs; δ = 10 %.
BLA6H0912-500_1
Objective data sheet
Rev. 01 — 5 March 2009
© NXP B.V. 2009. All rights reserved.
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BLA6H0912-500
LDMOS avionics radar power transistor
7. Application information
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7.1 Impedance information
Table 8. Typical impedance
Typical values per section unless otherwise specified.
f
GHz
ZS
960 0.75 j0.94
1030
0.91 j1.08
1060
1.00 j1.13
1090
1.10 j1.18
1215
1.71 j1.20
ZL
1.43 j0.95
1.29 j0.95
1.23 j0.96
1.17 j0.99
0.96 j1.16
gate
ZS
drain
ZL
001aaf059
Fig 1. Definition of transistor impedance
BLA6H0912-500_1
Objective data sheet
Rev. 01 — 5 March 2009
© NXP B.V. 2009. All rights reserved.
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8. Package outline
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Flanged ceramic package; 2 mounting holes; 2 leads
BLA6H0912-500
LDMOS avionics radar power transistor
SOT634A
D
A
F
3
D1
U1 B
qC
c
L1
U2
AL
2
b
p
w1 M A M B M
E1
E
w2 M C M
Q
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A b c D D1 E E1 F L p Q q U1 U2 w1 w2
mm 4.83
3.68
inches 0.190
0.145
12.82 0.15 22.58 22.56
12.57 0.08 22.12 22.15
0.505 0.006 0.889 0.888
0.495 0.003 0.871 0.872
13.34 13.34
13.08 13.08
0.525 0.525
0.515 0.515
1.14
0.89
0.045
0.035
5.33
4.32
0.210
0.170
3.38 1.70 27.94
3.12 1.45
0.133 0.067 1.100
0.123 0.057
34.16 13.84
33.91 13.59
1.345 0.545
1.335 0.535
0.25 0.51
0.010 0.020
OUTLINE
VERSION
SOT634A
IEC
REFERENCES
JEDEC
JEITA
Fig 2. Package outline SOT634A
BLA6H0912-500_1
Objective data sheet
Rev. 01 — 5 March 2009
EUROPEAN
PROJECTION
ISSUE DATE
01-11-27
03-05-01
© NXP B.V. 2009. All rights reserved.
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