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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19060/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
www.datas1h.e9etto4u2.c.0omGHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier
applications.
Typical CDMA Performance: 1960 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 7.5 Watts
Power Gain — 12.5 dB
Adjacent Channel Power —
885 kHz: –47 dBc @ 30 kHz BW
1.25 MHz: –55 dBc @ 12.5 kHz BW
2.25 MHz: –55 dBc @ 1 MHz BW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
MRF19060
MRF19060R3
MRF19060SR3
1990 MHz, 60 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF19060R3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465A–06, STYLE 1
NI–780S
MRF19060SR3
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
–0.5, +15
180
1.03
–65 to +150
200
Class
1 (Minimum)
M3 (Minimum)
Max
0.97
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF19060 MRF19060R3 MRF19060SR3
1

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
www.daGtasteheSeot4uurc.ceoLmeakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 500 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
V(BR)DSS
IDSS
IGSS
gfs
VGS(th)
VGS(Q)
VDS(on)
Crss
Gps
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
Pout, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 60 W CW, f = 1990 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
P1dB
Ψ
(1) Part is internally matched both on input and output.
Min Typ Max Unit
65 — — Vdc
——
6 µAdc
——
1 µAdc
— 4.7 —
2—4
2.5 3.9 4.5
— 0.27 —
S
V
V
V
— 2.7 — pF
11 12.5 —
dB
33 36 — %
— –31 –28 dBc
— –12 —
dB
— 60 — W
No Degradation In Output Power
Before and After Test
MRF19060 MRF19060R3 MRF19060SR3
2
MOTOROLA RF DEVICE DATA

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VGG R1
+
+
C1
C2 R2
C3
R3
C4
R4
+ B2
C5 C6
VDD
+
B3
C7 C8
www.datasheet4u.com
Z9 Z10
RF
INPUT Z1
Z2 Z3 Z4 Z5 Z6 Z7 Z8
C10
C9
Z11 Z12 Z13 Z14 Z15 Z16
Z17
C11
DUT
RF
Z18 OUTPUT
C12
B2 – B3
C1
C2, C7
C3, C8
C4
C5
C6
C9
C10, C11
C12
R1
R2
R3
R4
Z1
Z2
Z3
Ferrite Beads, Fair Rite, 2743019447
10 µF, 50 V Electrolytic Capacitor, Panasonic #ECEV1HV100R
1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X
0.10 µF Chip Capacitors, B Case, Kemet #CDR33BX104AKWS
5.1 pF Chip Capacitor, B Case, ATC #100B5R1JCA500X
6.2 pF Chip Capacitor, B Case, ATC #100B6R2JCA500X
22 µF, 35 V Tantalum Capacitor, SMT, Sprague
0.8 pF – 8.0 pF Variable Capacitor, Johanson Gigatrim
10 pF Chip Capacitors, B Case, ATC #100B100JCA500X
0.4 pF – 2.5 pF Variable Capacitor, Johanson Gigatrim
1 k, 1/4 W Fixed Film Chip Resistor, 0.08x 0.13
560 k, 1/4 W Fixed Film Chip Resistor, 0.08x 0.13
15 , 1/4 W Fixed Film Chip Resistor, 0.08x 0.13
10 , 1/4 W Fixed Film Chip Resistor, 0.08x 0.13
0.580x 0.074Microstrip
0.100x 0.074Microstrip
0.384x 0.074Microstrip
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Board
Figure 1. MRF19060 Test Circuit Schematic
0.152x 0.140Microstrip
0.090x 0.102Microstrip
0.245x 0.217Microstrip
0.090x 0.737Microstrip
0.530x 0.941Microstrip
1.010x 0.050Microstrip
1.060x 0.050Microstrip
0.446x 1.137Microstrip
0.152x 0.567Microstrip
0.183x 0.220Microstrip
0.100x 0.338Microstrip
0.480x 0.142Microstrip
0.140x 0.080Microstrip
0.173x 0.080Microstrip
0.420x 0.080Microstrip
0.030Glass TeflonArlon
GX–0300–55–22, 2 oz Cu
MOTOROLA RF DEVICE DATA
MRF19060 MRF19060R3 MRF19060SR3
3

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TO GATE
BIAS
FEEDTHRU
www.datasheet4u.com
C1 R1
C2 R2 C3
R3
C4
C9 C10
C5
R4
C7
C6
B2
B3
C8
TO DRAIN
BIAS
FEEDTHRU
C11 C12
MRF19060
Figure 2. MRF19060 Test Circuit Component Layout
MRF19060 MRF19060R3 MRF19060SR3
4
MOTOROLA RF DEVICE DATA

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TYPICAL CHARACTERISTICS
40 0
35 η -5
30
25 IRL
www.datas2h0eet4PVuDouD.tc==o62m06
Vdc
W (PEP),
IDQ
=
500
mA
15 Two-Tone Measurement, 100 kHz Tone Spacing
10 Gps
5 IMD
-10
-15
-20
-25
-30
-35
0 -40
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
45
VDD = 26 Vdc
40 IDQ = 700 mA, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz),
35 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
30
2.25 MHz
25
885 kHz
20
1.25 MHz
15
η
Gps
10 CDMA 9 Channels Forward
Pilot:0, Paging:1, Traffic:8-13, Sync:32
5
4 8 12 16
Pout, OUTPUT POWER (WATTS Avg.) CDMA
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
-20
-30
-40
-50
-60
-70
-80
-90
-100
20
-25
VDD = 26 Vdc
-30 f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
-35
-40 900 mA
-45
-50
700 mA
-55 500 mA
-60
-65
0.1
1.0 10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
100
14
900 mA
13 700 mA
12 500 mA
11
VDD = 26 Vdc
f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
10
0.1 1.0 10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 7. Power Gain versus Output Power
-20
VDD = 26 Vdc
-30 IDQ = 700 mA, f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
-40
3rd Order
-50
-60 5th Order
7th Order
-70
-80
0.1
1.0 10
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Products
versus Output Power
100
13.5
Pout = 60 W (PEP), IDQ = 500 mA
f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
13
-22
-24
-26
-28
12.5 Gps -30
IMD
12
-32
-34
-36
11.5
22
24 26 28
VDD, DRAIN VOLTAGE (VOLTS)
30
-38
32
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF19060 MRF19060R3 MRF19060SR3
5