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Freescale Semiconductor
Technical Data
Document Number: MW7IC2725N
Rev. 2, 10/2008
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2725N wideband integrated circuit is designed with on - chip
matching that makes it usable from 2300 - 2700 MHz. This multi - stage
www.datasshtreuect4tuu.rceomis rated for 26 to 32 Volt operation and covers all typical cellular
base station modulations.
TPyoputic=al4WWiMatAtsXAPvegr.,fofr=m2a7n0ce0:MVHDDz,=O2F8DVMol8ts0,2I.D1Q61d,=6747QmAAM, I3D/4Q,2 = 275 mA,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 50 dBc in 1 MHz Channel Bandwidth
Driver Applications
Typical WiMAX Performance:
Pout = 26 dBm Avg., f = 2700
MVHDDz,=O2F8DVMol8ts0,2I.D1Q61d,=6747QmAAM,
I3D/Q4,2
=
275
mA,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.8 dB
Power Added Efficiency — 3.2%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — - 56 dBc in 1 MHz Channel Bandwidth
Capable
CW
of
Handling
10:1
VSWR,
@
32
Vdc,
2600
MHz,
Pout
=
25
Watts
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 5 W CW
Pout
Typical Pout @ 1 dB Compression Point ] 25 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
On - Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
MW7IC2725NR1
MW7IC2725GNR1
MW7IC2725NBR1
2500 - 2700 MHz, 4 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2725NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2725GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2725NBR1
GND 1
VDS1
NC
2
3
NC 4
NC 5
RFin 6
16 GND
15 NC
14 RFout/VDS2
RFin
VGS1 Quiescent Current
VGS2 Temperature Compensation (1)
VDS1
Figure 1. Functional Block Diagram
RFout/VDS2
NC
VGS1
VGS2
VDS1
GND
7
8
9
10
11
13 NC
12 GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977
or AN1987.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
1

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Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Operating Junction Temperature (1,2)
www.datasheet4u.com
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDS
VGS
VDD
Tstg
TJ
Pin
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +10
32, +0
- 65 to +150
225
20
Value (2,3)
Unit
Vdc
Vdc
Vdc
°C
°C
dBm
Unit
°C/W
WiMAX Application
(Case Temperature 75°C, Pout = 4 W Avg.)
Stage 1, 28 Vdc, IDQ1 = 77 mA
Stage 2, 28 Vdc, IDQ2 = 275 mA
5.9
1.4
CW Application
(Case Temperature 81°C, Pout = 25 W CW)
Table 3. ESD Protection Characteristics
Stage 1, 28 Vdc, IDQ1 = 77 mA
Stage 2, 28 Vdc, IDQ2 = 275 mA
5.5
1.3
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate - Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
Stage 1 - On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 μAdc)
VGS(th)
1.2
1.9
2.7 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 77 mA)
VGS(Q)
2.7
— Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test)
VGG(Q)
12.5
15.8
19.5
Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
2
RF Device Data
Freescale Semiconductor

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Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 2 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
www.datashGeeatt4eu-.Scomurce Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
1 μAdc
IGSS
1 μAdc
Stage 2 - On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 80 μAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 275 mAdc)
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 800 mAdc)
Stage 2 - Dynamic Characteristics (1)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
VGS(th)
1.2
1.9
2.7
Vdc
VGS(Q)
2.7
Vdc
VGG(Q)
11
14
18 Vdc
VDS(on)
0.15
0.47
0.8
Vdc
Coss
111
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
Power Gain
Gps 25.5 28.5 30.5 dB
Power Added Efficiency
PAE 15
17
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
9
— dB
Adjacent Channel Power Ratio
ACPR
- 50 - 46 dBc
Input Return Loss
IRL — - 15 - 10 dB
Typical Performances OFDM Signal - 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc,
IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth,
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Relative Constellation Error (2)
RCE
- 33 —
dB
Error Vector Magnitude (2)
EVM
2.2
— % rms
1. Part internally matched both on input and output.
2. RCE = 20Log(EVM/100)
(continued)
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
3

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Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, 2500-2700 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
25
W
IMD Symmetry @ 27 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
IMDsym
MHz
— 50 —
(Delta IMD Third Order Intermodulation between Upper and Lower
www.dataSsihdeeebta4nud.cso>m2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
90
— MHz
Gain Flatness in 200 MHz Bandwidth @ Pout = 4 W Avg.
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ Pout = 25 W CW
Average Group Delay @ Pout = 25 W CW, f = 2600 MHz
Part - to - Part Insertion Phase Variation @ Pout = 25 W CW,
f = 2600 MHz, Six Sigma Window
GF — 0.5 — dB
Φ — 2.1 — °
Delay
2.3
ns
ΔΦ — 22 —
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG — 0.036 — dB/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
ΔP1dB — 0.003 — dBm/°C
Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg.,
f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
Power Gain
Gps — 27.8 — dB
Power Added Efficiency
PAE — 3.2 —
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR — 9 — dB
Adjacent Channel Power Ratio
ACPR
- 56
— dBc
Input Return Loss
IRL — - 13 — dB
Relative Constellation Error @ Pout = 1.25 W Avg. (1)
1. RCE = 20Log(EVM/100)
RCE
- 40
dB
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
4
RF Device Data
Freescale Semiconductor

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VDD1
C17
VD2
C16
B1
28 V
C9 C15
C8
www.datasheet4u.com
C7
RF
INPUT
Z1
Z2
Z3
C4
C5
C6
VG1
R4 R5 R6
1 NC
2
3 NC
4 NC
5 NC
Z4
6
7 NC
8
9
10
C1 11 NC
C2
C14
DUT NC 16
NC 15
C13
C12
14 Z5 Z6
Quiescent Current
Temperature
Compensation
NC 13
NC 12
Z13
RF
Z7 Z8 Z9 Z10 Z11
OUTPUT
Z12 Z14
C11
C10
VG2
R1
R2
R3
C3
Z1 0.500x 0.027Microstrip
Z2 0.075x 0.127Microstrip
Z3 1.640x 0.027Microstrip
Z4 0.100x 0.042Microstrip
Z5 0.151x 0.268Microstrip
Z6 0.025x 0.268x 0.056Taper
Z7 0.050x 0.056Microstrip
Z8 0.356x 0.056Microstrip
Z9
Z10
Z11
Z12
Z13*
Z14
PCB
0.040x 0.061Microstrip
0.020x 0.050Microstrip
0.050x 0.050Microstrip
0.050x 0.027Microstrip
0.338x 0.020Microstrip
1.551x 0.027Microstrip
Rogers R04350B, 0.0133, εr = 3.48
* Line length includes microstrip bends
Figure 3. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
B1
47 Ω, 100 MHz Short Ferrite Bead
2743019447
C1, C4, C7, C12, C15
6.8 pF Chip Capacitors
ATC600S6R8CT250XT
C2, C5, C8, C13
10 nF Chip Capacitors
C0603C103J5RAC
C3, C6, C9, C14
1 μF, 50 V Chip Capacitors
GRM32RR71H105KA01B
C10
2.4 pF Chip Capacitor
ATC600S2R4BT250XT
C11
3.3 pF Chip Capacitor
ATC600S3R3BT250XT
C16, C17
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
R1, R4
12 KΩ, 1/4 W Chip Resistors
CRCW12061202FKEA
R2, R3, R5, R6
1 KΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Manufacturer
Fair - Rite
ATC
Kemet
Murata
ATC
ATC
Murata
Vishay
Vishay
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
5