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FJL6920
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BVCBO = 1700V
• Low Saturation Voltage : VCE(sat) = 3V (Max.)
• For Color Monitor
1 TO-264
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Rating
1700
800
6
20
30
200
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IC=500µA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=11A
IC=11A, IB=2.75A
IC=11A, IB=2.75A
VCC=200V, IC=10A, RL=20
IB1=2.0A, IB2= - 4.0A
Min.
1700
800
6
8
5.5
Typ.
0.15
Max.
1
10
1
8.5
3
1.5
3
0.2
Units
mA
µA
mA
V
V
V
V
V
µs
µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC Thermal Resistance, Junction to Case
Typ
Max
0.625
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001

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Typical Characteristics
16
I =4.0A
B
14
12
10
8
I =2.0A
B
I =1.5A
B
I =1.0A
B
6 I =0.5A
B
4
I =0.2A
B
2
0
0 2 4 6 8 10
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristics
10
I =3I
CB
Ta = 125oC
1
Ta = 25oC
Ta = - 25oC
0.1
0.01
0.1
1 10
IC [A], COLLECTOR CURRENT
100
Figure 3. Collector-Emitter Saturation Voltage
16
V = 5V
14 CE
12
10
8
6
4
2
125oC 25oC
- 25oC
0
0.0 0.2 0.4 0.6 0.8 1.0
V [V], BASE-EMITTER VOLTAGE
BE
Figure 5. Base-Emitter On Voltage
1.2
©2001 Fairchild Semiconductor Corporation
100
Ta = 125oC Ta = 25oC
Ta = - 25oC
10
V = 5V
CE
1
0.1 1
10
IC [A], COLLECTOR CURRENT
Figure 2. DC Current Gain
100
10
I =5I
CB
1
0.1
Ta = 125oC
Ta = 25oC
Ta = - 25oC
0.01
0.1
1 10
IC [A], COLLECTOR CURRENT
100
Figure 4. Collector-Emitter Saturation Voltage
10
V = 200V,
CC
I = 10A, I = 2A
C B1
tSTG
1
tF
0.1
0.01
1
10
IB2 [A], REVERSE BASE CURRENT
Figure 6. Resistive Load Switching Time
Rev. A, May 2001

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Typical Characteristics (Continued)
100
V = 200V,
CC
I = 10A, I = - 4A
C B2
10
1 tSTG
tF
0.1
0.01
1
10
IB1 [A], FORWARD BASE CURRENT
Figure 7. Resistive Load Switching Time
100
IC (Pulse) t = 100ms t = 10ms
10 IC (DC)
t = 1ms
1
0.1
T = 25oC
C
Single Pulse
0.01
1
10
100
1000
10000
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 9. Forward Bias Safe Operating Area
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC [OC], CASE TEMPERATURE
Figure 11. Power Derating
©2001 Fairchild Semiconductor Corporation
V = 200V,
CC
10
I = 2A, I = - 4A
B1 B2
tSTG
1
tF
0.1
1 10
IC [A], COLLECTOR CURRENT
Figure 8. Resistive Load Switching Time
40
R = 0, I = 15A
B2 B1
35
V
CC
=
30V,
L
=
200µH
30
25
20
15
VBE(off) = -6V
10
VBE(off) = -3V
5
1
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 10. Reverse Bias Safe Operating Area
Rev. A, May 2001