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T1010H
High temperature 10 A sensitive TRIACs
Features
Medium current TRIAC
Logic level sensitive TRIAC
150 °C max. Tj turn-off commutation
Clip bounding
RoHS (2002/95/EC) compliant packages
Applications
The T1010H is designed for the control of AC
actuators in appliances and industrial systems.
The multi-port drive of the microcontroller can
control the multiple loads of such appliances
and systems through these sensitive gate
TRIACs.
Description
Specifically designed to operate at 150 °C, the
new 10 A T1010H TRIACs provide an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost
effectiveness when compared to electro-
mechanical solutions.
Based on ST logic level technology, they offer an
IGT lower than 10 mA and specified minimal
commutation and high noise immunity levels valid
up to the Tj max.
A2
G
A1
A2
A2
A2 G
A1
D2PAK
T1010H-6G
G
A2
A1
TO-220AB
T1010H-6T
Table 1. Device summary
Symbol
Value
IT(RMS)
VDRM/VRRM
IGT MAX
10
600
10
Unit
A
V
mA
May 2009
Doc ID 15715 Rev 1
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1 Characteristics
T1010H
Table 2. Absolute maximum ratings
Symbol
Parameter
IT(RMS) On-state rms current (full sine wave)
ITSM
I²t
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
D2PAK, TO-220AB Tc = 135 °C
F = 60 Hz
t = 16.7 ms
F = 50 Hz
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 150 °C
tp = 10 ms
Tj = 25 °C
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 150 °C
Tj = 150 °C
Value
10
105
100
66
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 150
Unit
A
A
A²s
A/µs
V
A
W
°C
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
Min.
IGT
VGT
VGD
IH (1)
VD = 12 V RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
IT = 100 mA
IL IG = 1.2 IGT
dV/dt (1) VD = 67% VDRM, gate open, Tj = 150 °C
(dI/dt)c (1) Logic level, 0.1 V/µs, Tj = 150 °C
Logic level, 15 V/µs, Tj = 150 °C
1. For both polarities of A2 referenced to A1.
I - II - III
I - II - III
I - II - III
I - III
II
1
0.15
75
14.4
3.8
Max.
10
1.0
25
30
35
Unit
mA
V
V
mA
mA
V/µs
A/ms
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Characteristics
Table 4. Static characteristics
Symbol
Test conditions
VT (1)
Vt0 (1)
Rd (1)
ITM = 14.1 A, tp = 380 µs
Threshold voltage
Dynamic resistance
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
Tj = 150 °C
VD/VR = 400 V (at peak mains voltage) Tj = 150 °C
VD/VR = 200 V (at peak mains voltage) Tj = 150 °C
1. for both polarities of A2 referenced to A1.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
Table 5. Thermal resistance
Symbol
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
Parameter
S = 1 cm2
D2PAK / TO-220AB
D2PAK
TO-220AB
Value
1.5
0.80
41.0
5
3.6
3.0
2.5
Unit
V
V
mΩ
µA
mA
Value
1.50
45
60
Unit
°C/W
Figure 1.
P(W)
12
11
10
9
8
7
6
5
4
3
2
1
0
01
Maximum power dissipation versus Figure 2. On-state rms current versus case
on-state rms current (full cycle)
temperature (full cycle)
IT(RMS)(A)
2 3 4 5 6 7 8 9 10
IT(RMS)(A)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
25
TC(°C)
50 75 100 125 150
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T1010H
Figure 3.
On-state rms current versus
ambient temperature (free air
convection, (full cycle)
IT(RMS)(A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Ta(°C)
25 50 75 100 125 150
Figure 4. Relative variation of thermal
impedance, versus pulse duration
K=[Zth/Rth]
1.E+00
1.E-01
Zth(j-c)
Zth(j-a)
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5.
Relative variation of gate trigger Figure 6.
current and voltage versus junction
temperature (typical values)
Relative variation of holding and
latching current versus junction
temperature (typical values)
IGT, VGT[Tj] / IGT, VGT[Tj=25 °C]
2.5
IGT Q3
2.0 IGTQ1- Q2
1.5
1.0 VGT Q1 - Q2- Q3
IH, IL [Tj] / IH, IL [Tj=25 °C]
2.0
IH
1.5
IL
1.0
0.5
0.0
-50
-25
0
Tj(°C)
25 50 75
100 125 150
0.5
0.0
-50
-25
0
Tj(°C)
25 50 75 100 125 150
Figure 7.
Surge peak on-state current versus Figure 8.
number of cycles
Non-repetitive surge peak on-state
current and corresponding value
of I2t
ITSM(A)
110
100
90
80
70
60
50
40
30
Repetitive
20 TC=135 °C
10
0
1
Non repetitive
Tj initial=25 °C
Number of cycles
10 100
t=20ms
One cycle
1000
ITSM(A), I²t (A²s)
1000
dI/dt limitation: 50 A/µs
100
10
Sinusoidal pulse width tp < 10 ms
1
0.01 0.10
Tj initial=25 °C
ITSM
I²t
tP(ms)
1.00 10.00
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Characteristics
Figure 9.
On-state characteristics (maximum Figure 10. Relative variation of critical rate of
values)
decrease of main current versus
junction temperature
ITM (A)
100
(dI/dt)C [Tj] / (dI/dt)c [Tj=150 °C]
15
Tj max :
Vto = 0.80 V
Rd = 41 mΩ
14
13
12
11
10
9
10 Tj=150 °C
8
7
6
Tj=25 °C
5
4
3
2
VTM (V)
1
1 Tj(°C)
0
012345
25 50 75 100 125 150
Figure 11. Relative variation of critical rate of Figure 12. Relative variation of static dV/dt
decrease of main current versus
immunity versus junction
reapplied dV/dt (typical values)
temperature
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
4
3
2
1
0
0.1
(dV/dt)C (V/µs)
1.0 10.0
100.0
dV/dt [Tj] / dV/dt [Tj=150 °C]
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
25 50 75
Tj(°C)
100
VD=VR=400 V
125 150
Figure 13. Variation of leakage current versus Figure 14. Acceptable case to ambient thermal
junction temperature for different
resistance versus repetitive peak
values of blocking voltage
off-state voltage
IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=150°C; 600V]
1.0E+00
VDRM=VRRM=600 V
1.0E-01
VDRM=VRRM=400 V
1.0E-02
VDRM=VRRM=200 V
1.0E-03
1.0E-04
Tj(°C)
25 50 75 100 125 150
Rth(c-a) (°C/W)
45
40
35
30
25
20
15
10
5
0
200
300
Rth(j-c)=1.5 °C/W
TJ=150 °C
VAC PEAK(V)
400
500
600
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