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2SA2223
Audio Amplification Transistor
Features and Benefits
LAPT (High frequency multi emitter transistor)
Small package (TO-3P)
High power handling capacity, 160 W
Improved sound output by reduced on-chip impedance
For professional audio (PA) applications, VCEO = –260 V
versions available
Complementary to 2SC6145
Recommended output driver: 2SA1668A
Package: 3-Lead TO-3P
Description
Sanken LAPT transistors have an innovative design, produced
by adapting advancements in the unique Sanken thin-wafer
production technology. These PNP power transistors achieve
faster power-up by decreasing thermal resistance, and provide
a higher avalanche breakdown voltage rating. The high power-
handling capacity of the TO-3P package allows a smaller
footprint on the circuit board layout. This series of transistors
is very well suited not only for multichannel applications
for AV (audio-visual) amplifiers and receivers, but also for
parallel connection applications for PA (professional audio
system) amplifiers.
Applications include the following:
Single transistors for audio amplifiers
Home audio amplifiers
Professional audio amplifiers
Automobile audio amplifiers
Audio market
Single transistors for general purpose
Not to scale
Equivalent Circuit
E3
B1
2
C
38104

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2SA2223www.DataSheet4U.com
Audio Amplification Transistor
Selection Guide
Part Number
Type
2SA2223*
PNP
*Specify hFE range when ordering.
hFE Rating
Range R: 40 to 80
Range O: 50 to 100
Range Y: 70 to 140
Absolute Maximum Ratings at TA = 25°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
TCASE = 25°C
Remarks
ELECTRICAL CHARACTERISTICS at TA = 25°C
Characteristic
Symbol
Test Conditions
Collector-Cutoff Current
ICBO
VCB = –230 V
Emitter Cutoff Current
IEBO
VEB = –5 V
Collector-Emitter Voltage
V(BR)CEO IC = –25 mA
DC Current Transfer Ratio*
hFE VCE = –4 V, IC = –5 A
Collector-Emitter Saturation Voltage
VCE(sat) IC = –5 A, IB = –0.5 A
Cutoff Frequency
fT VCE = –12 V, IE = 2 A
Output Capacitance
COB VCB = –10 V, IE = 0 A, f = 1 MHz
*hFE rating: 40 to 80 (R brand on package), 50 to 100 (O), 70 to 140 (Y).
Packing
30 pieces per tube
Rating
–230
–230
–5
–15
–4
160
150
–55 to150
Unit
V
V
V
A
A
W
°C
°C
Min.
–230
40
Typ.
35
500
Max.
–10
–10
140
–0.5
Unit
μA
μA
V
V
MHz
pF
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
2

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2SA2223www.DataSheet4U.com
Audio Amplification Transistor
15
IC vs. VCE
10
5
0
0
15
IC vs. VBE
–VCE = 4 V Continuous
10
5
Performance Characteristics
1 A 500 mA
300 mA
200 mA
3
2
100 mA
VCE(sat) vs. IB
50 mA
–IB= 20 mA
123
–VCE (V)
4
1
0
0
1000
hFE vs. IC
100
–VCE = 4 V Continuous
10
–IC= 5 A
–IC= 10 A
0.5 1.0 1.5
–IB (A)
125°C
25°C
–30°C
2.0
00
50
40
30
fT vs. IE
–VCE = 12 V Continuous
20
10
0.5 1.0 1.5
–VBE (V)
2.0
1
0.01
0.1
1
10
–IC (A)
100.0
Typ.
10.0 D1C0100mmss
Safe Operating
Area
1.0
TA= 25°C, single pulse,
no heatsink,
natural cooling
0.1
0
0.01
10.00
0.1
1
IE (A)
10
100
0.01 1
200
10 100
–VCE (V)
100
1000
RθJA vs. t
1.00
0.10
0.01
1
PC vs. TA
10 t (ms) 100
1000
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
150
100 With Infinite Heatsink
50
3.5 Without Heatsink
0
0 25 50 75
100 125 150
TA (°C)
3

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2SA2223www.DataSheet4U.com
Audio Amplification Transistor
Package Outline Drawing, TO-3P
15.8 ±0.2
15.6 ±0.3
14.0 ±0.3
13.6 ±0.2
9.6 ±0.2
5.0 MAX
2.1 MAX
Exposed
heatsink pad
Branding
Area
XXXXXXXX
XXXXX
XXXXX
2
+0.2
–0.1
3
+0.2
–0.1
View A
2
+0.2
–0.1
1.0
+0.2
–0.1
View B
5.45 ±0.1
Terminal dimension at lead tip
1.7
+0.2
–0.1
0.6
+0.2
–0.1
12
3
Gate burr: 0.3 mm (max.), mold flash may appear at opposite side
Terminal core material: Cu
Terminal treatment: Ni plating and Pb-free solder dip
Leadform: 100
Package: TO-3P (M100)
Approximate weight: 6 g
Dimensions in millimeters
0.7 MAX
0.7 MAX
View A
View B
Branding codes (exact appearance at manufacturer discretion):
1st line, type: A2223
2nd line left, lot: YM
Where: Y is the last digit of the year of manufacture
M is the month (1 to 9, O, N, D)
2nd line right, subtype: H
Where: H is the hFE rating (O, R, or Y; for values see
footnote, Electrical Characteristics table)
Leadframe plating Pb-free. Device composition
includes high-temperature solder (Pb >85%),
which is exempted from the RoHS directive.
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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2SA2223www.DataSheet4U.com
Audio Amplification Transistor
Packing Specification
Tube Packing
505 10
45
525
118
185
30 pieces per tube
17 tubes per layer
2 layers per carton
1020 pieces per outer carton
Dimensions in millimeters
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5