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Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field - Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common source amplifier applications
in 32 volt digital television transmitter equipment.
Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts,
IDQO=u2tp0u0t0PmowAe, r8—K M4o5dWe,a6tt4s
QAM
Avg.
Power Gain 16.7 dB
Drain Efficiency 21%
ACPR - 58 dBc
Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts,
IDQO=u2tp0u0t0PmowAer — 80 Watts Avg.
Power Gain 16.5 dB
Drain Efficiency 27.5%
IMD - 31.3 dBc
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Device Designed for Push - Pull Operation Only
Integrated ESD Protection
Excellent Thermal Stability
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40μNominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Document Number: MRF377H
Rev. 1, 5/2006
MRF377HR3
MRF377HR5
470 - 860 MHz, 45 W AVG., 32 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 375G - 04, STYLE 1
NI - 860C3
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
ID
PD
- 0.5, +65
- 0.5, +15
17
648
3.7
Vdc
Vdc
Adc
W
W/°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ TC = 25°C
Derate above 25°C
Tstg - 65 to +150 °C
TC 150 °C
TJ 200 °C
CW 235
W
1.38 W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 105 W CW
Case Temperature 77°C, 45 W CW
RθJC
0.27
0.29
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
1

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Table 3. ESD Protection Characteristics
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Test Conditions
Human Body Model
Machine Model
Charge Device Model
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics (1)
Drain - Source Breakdown Voltage (4)
(VGS = 0 Vdc, ID =10 μA)
Zero Gate Voltage Drain Current (4)
(VDS = 32 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μA)
V(BR)DSS
IDSS
IGSS
VGS(th)
65
On Characteristics
Gate Quiescent Voltage (3)
(VDS = 32 Vdc, ID = 2000 mAdc)
VGS(Q)
2.5
Drain - Source On - Voltage (1)
(VGS = 10 Vdc, ID = 3 A)
VDS(on)
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
Functional Tests (3) (In DVBT OFDM Single - Channel, Narrowband Fixture, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
Gps 16.5
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
ηD 21
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA,
f = 860 MHz)
ACPR
Typical Performances (3) (In DVBT OFDM Single - Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurement made with device in push - pull configuration.
4. Drains are tied together internally as this is a total device value.
Class
1 (Minimum)
M3 (Minimum)
7 (Minimum)
Typ Max
——
—1
—1
2.8 —
3.5 4.5
0.27 —
3.2 —
18.2
22.9
- 59.2
- 57
17.6 —
17.6 —
17.4 —
17.4 —
16.8 —
Unit
Vdc
μAdc
μAdc
Vdc
Vdc
Vdc
pF
dB
%
dBc
dB
(continued)
MRF377HR3 MRF377HR5
2
RF Device Data
Freescale Semiconductor

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Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
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Characteristic
Symbol
Min
Drain Efficiency
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ηD
Adjacent Channel Power Ratio
(VDD = 32 Vdc, Pout = 45 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ACPR
Typical Performances (1) (In ATSC 8VSB Single - Channel, Broadband Fixture, 50 ohm system)
Common Source Power Gain
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
Gps
Drain Efficiency
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
ηD
Intermodulation Distortion
(VDD = 32 Vdc, Pout = 80 W Avg., IDQ = 2000 mA)
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
IMD
1. Measurement made with device in push - pull configuration.
Typ
23.5
25.8
23.0
22.7
21.3
- 59.3
- 59.3
- 58.7
- 58.7
- 58.1
17.5
17.5
17.2
17.2
16.6
31.0
34.3
30.1
29.6
27.8
31.7
32.7
32.9
34.2
35.4
Max Unit
%
dBc
dB
%
dBc
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
3

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Table 5. 845 - 875 MHz Narrowband Test Circuit Component Designations and Values
www.DataSheet4UP.caortm
Description
Part Number
B1, B2
Balun 1, Balun 2
C1
C2
C3
C4, C5
C6
C7, C8, C9, C10
C11, C12
C13, C14, C15, C16
C17, C18
C19, C20
C21, C22, C23, C24
C25, C26
L1
L2
L3, L4
R1, R2
WB1, WB2, WB3, WB4
PCB
Ferrite Beads, Surface Mount, 11 Ω (0805)
0.8 - 1GHz Xinger Balun
33 pF Chip Capacitor (0805)
2.7 pF Chip Capacitor (0603)
12 pF Chip Capacitor (0805)
6.8 pF Chip Capacitors (0805)
2.7 pF Chip Capacitor (0805)
3.3 pF Chip Capacitors (0805)
2.2 μF, 50 V Chip Capacitors
0.01 μF, 100 V Chip Capacitors
0.56 μF, 50 V Chip Capacitors
10 μF, 50 V Tantalum Chip Capacitors
47 μF, 16 V Tantalum Chip Capacitors
470 μF, 63 V Electrolytic Capacitors
12 nH Inductor (0603)
7.15 nH Inductor
10 nH Inductor (0603)
24 Ω, 1/8 W, 5% Chip Resistors (1206)
Brass Wear Shims
Arlon 30 mil, εr = 2.56
2508051107Y0
3A412
08055J330JBT
06035J2R7BBT
08051J120GBT
08051J6R8BBT
0805J2R7BBT
08051J3R3BBT
C1825C225J5RAC3810
C1825C103J1GAC
C1825C564J5RAC
522Z050/100MTRE
TPSD476K016R0150
NACZF471M63V (18x22)
0603HC- 12NXJB
1606 - 7
0603HC- 10NXJB
DS1152
Manufacturer
Fair - Rite
Anaran
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
AVX / Kyocera
Kemet
Kemet
Kemet
Tecate
AVX / Kyocera
Nippon
CoilCraft
CoilCraft
CoilCraft
DS Electronics
MRF377 Gate
VGG C11
MRF377 Drain
C19
VDD
C22
Balun 1
C21
C14
C9
L3
R1
B1
C15
C18 Balun 2
C26
C2 L1
C3 C4
C5 C6
C1
R2
C13 L4
B2
C16
C24 C23
C10
C17
L2
C7
C8
C25
VGG C12
C20
DS1152−A Rev 0
VDD
DS1152−B Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 1. 845 - 875 MHz Narrowband Test Circuit Component Layout
MRF377HR3 MRF377HR5
4
RF Device Data
Freescale Semiconductor

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www.DataSheet4U.com
19
TYPICAL NARROWBAND CHARACTERISTICS
−20
18.5
Gps
18
17.5
17
16.5
16
10
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 2. Two - Tone Power Gain versus
Output Power
−30
IDQ = 1400 mA
−40
1600 mA
−50
−60
−70
10
1800 mA
2000 mA
2200 mA
VDD = 32 Vdc
f1 = 859.95 MHz, f2 = 860.05 MHz
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. Third Order Intermodulation Distortion
versus Output Power
−20
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
−80
10
VDD = 32 Vdc
IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion Products
versus Output Power
45
VDD = 32 Vdc
40 IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
35
30
ηD
25
20
15
10
5
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Drain Efficiency versus
Output Power
19
Gps
18
17
ηD
16
VDD = 32 Vdc
15 IDQ = 2000 mA
f1 = 859.95 MHz, f2 = 860.05 MHz
14
IMD
13
12
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain, Efficiency and IMD
versus Output Power
60
40
20
0
−20
−40
−60
−80
RF Device Data
Freescale Semiconductor
MRF377HR3 MRF377HR5
5