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STB30N65M5, STF30N65M5, STI30N65M5
STP30N65M5, STW30N65M5
N-channel 650 V, 0.125 Ω, 22 A, MDmesh™ V Power MOSFET
D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Order codes
STB30N65M5
STF30N65M5
STI30N65M5
STP30N65M5
STW30N65M5
VDSS @
TJMAX
710 V
710 V
710 V
710 V
710 V
RDS(on) max. ID
< 0.139 Ω
< 0.139 Ω
< 0.139 Ω
< 0.139 Ω
< 0.139 Ω
22 A
22 A(1)
22 A
22 A
22 A
1. Limited only by maximum temperature allowed
Worldwide best RDS(on)*area
Higher VDSS rating
Excellent switching performance
Easy to drive
100% avalanche tested
High dv/dt capability
Applications
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
Switching applications
Description
'
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
3
!-V
Package
Packaging
STB30N65M5
STF30N65M5
STI30N65M5
STP30N65M5
STW30N65M5
September 2011
30N65M5
30N65M5
30N65M5
30N65M5
30N65M5
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Doc ID 15331 Rev 3
Tape and reel
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Tube
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Contents
Contents
STB/F/I/P/W30N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
.......................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22 Doc ID 15331 Rev 3

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STB/F/I/P/W30N65M5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220, D²PAK
TO-247, I²PAK
TO-220FP
VGS
ID
ID
IDM (2)
PTOT
IAR
EAS
dv/dt (3)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 21 A, di/dt = 400 A/µs, VPeak < V(BR)DSS
± 25
22 22 (1)
13 13(1)
88 88 (1)
140 30
7
500
15
2500
- 55 to 150
150
Unit
V
A
A
A
W
A
mJ
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK TO-220FP I²PAK TO-220 TO-247
Rthj-case
Thermal resistance junction-
case max
Rthj-amb
Thermal resistance junction-
ambient max
Rthj-pcb
Thermal resistance junction-pcb
max
0.83
30
3.6
62.5
0.83 °C/W
50 °C/W
°C/W
Tl
Maximum lead temperature for
soldering purpose
300 °C
Doc ID 15331 Rev 3
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Electrical characteristics
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 11 A
STB/F/I/P/W30N65M5
Min. Typ. Max. Unit
650 V
1 µA
100 µA
100 nA
3 4 5V
0.125 0.139 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
2880
pF
- 68 - pF
5 pF
Co(tr)(1)
Equivalent
capacitance time
related
VGS = 0, VDS = 0 to 520 V
- 190 - pF
Co(er)(2)
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 520 V
- 65 - pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
- 1.6 - Ω
Qg Total gate charge
VDD = 520 V, ID = 11 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
64 nC
- 16 - nC
25 nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/22 Doc ID 15331 Rev 3

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STB/F/I/P/W30N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(off)
tr
tc
tf
Turn-off delay time
Rise time
Cross time
Fall time
Test conditions
VDD = 400 V, ID = 14 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21)
Min. Typ. Max Unit
50 ns
8 ns
--
20 ns
10 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 22 A, VGS = 0
-
-
22 A
88 A
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 21)
-
336
6
32
ns
µC
A
trr Reverse recovery time
ISD = 22 A, di/dt = 100 A/µs
395
Qrr Reverse recovery charge
VDD = 60 V, Tj = 150 °C
-7
IRRM Reverse recovery current
(see Figure 21)
34
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15331 Rev 3
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