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H11D1X, H11D2X, H11D3X, H11D4X
www.DataSHhe1e1t4DU1.c,oHm 11D2, H11D3, H11D4
HIGH VOLTAGE OPTICALLY
COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
'X' SPECIFICATIONAPPROVALS
z VDE 0884 in 3 available lead forms : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The H11D series of optically coupled isolators
consist of infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
Dimensions in mm
2.54
1
7.0
6.0 2
3
1.2
6
5
4
7.62
6.62 4.0
3.0
3.0
0.5
0.5
3.35
7.62
0.26
13°
Max
FEATURES
z Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
z High Isolation Voltage (5.3kVRMS ,7.5kVPK )
z High BVCER ( 300V - H11D1, H11D2 )
( 200V - H11D3, H11D4 )
z All electrical parameters 100% tested
z Custom electrical selections available
APPLICATIONS
z DC motor controllers
z Industrial systems controllers
z Measuring instruments
z Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
7.62
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
100mW
OUTPUTTRANSISTOR
Collector-emitterVoltage BVCER
H11D1,H11D2
H11D3,H11D4
Collector-base Voltage BVCBO
H11D1,H11D2
H11D3,H11D4
Emitter-collector Voltage BVECO
Collector Current
Power Dissipation
(RBE= 1MΩ )
300V
200V
300V
200V
6V
100mA
150mW
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
POWERDISSIPATION
Total Power Dissipation
250mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel:(01429)863609 Fax:(01429)863581 e-mail
sales@isocom.co.uk http://www.isocom.com
14/8/08
DB91077

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ELECTRICAL CHARACTERISTICS ( T = 25°C Unless otherwise noted )
A
PARAMETER
MIN TYP MAX UNITS
Input
Forward Voltage (VF)
1.2 1.5 V
Reverse Current (IR)
10 μA
Output
Collector-emitter Breakdown (BVCER )
H11D1, H11D2
H11D3, H11D4
Collector-base Breakdown (BV )
CBO
H11D1, H11D2
H11D3, H11D4
Emitter-collector Breakdown (BVECO )
Collector-emitter Dark Current (ICER )
H11D1, H11D2
300
200
300
200
6
V
V
V
V
V
100 nA
250 μA
H11D3, H11D4
100 nA
250 μA
TEST CONDITION
IF = 10mA
VR =6V
IC = 1mA, RBE = 1MΩ
( note 2 )
IC = 100μA
IE = 100μA
V = 200V,R =1MΩ
CE BE
VCE= 200V,RBE=1MΩ,
TA=100°C
V = 100V,R =1MΩ
CE BE
VCE= 100V,RBE=1MΩ,
TA=100°C
Coupled Current Transfer Ratio (CTR)
20
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage VISO
Input-output Isolation Resistance R
ISO
Turn-on Time
ton
Turn-off Time
toff
5300
7500
5x1010
5
5
%
0.4 V
VRMS
VPK
Ω
μs
μs
10mA IF , 10V VCE ,
R = 1MΩ
BE
10mA I , 0.5mA I ,
FC
RBE = 1MΩ
See note 1
See note 1
V = 500V (note 1)
IO
VCC = 10V, IC= 2mA,
RL = 100Ω , fig 1
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
VCC
RL = 100Ω
Input
ton
Output
tr
Output
10%
90%
FIG 1
toff
tf
10%
90%
14/8/08
DB91077m-AAS/A3

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Collector Power Dissipation vs. Ambient Temperature
400
Relative Current Transfer Ratio vs.
Forward Current ( normalised to 10mA I )
F
10
300
200
100
0
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
80
70
60
50
40
30
20
10
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Voltage vs. Forward Current
1.4
1.3
T = -55°C
A
1.2
TA = +25°C
1.1
1.0
0.9 TA= +100°C
0.8
0.1 0.2 0.5 1 2
5 10 20 50
Forward current I (mA)
F
14/8/08
1.0
0.1
0.01
1
VRBCEE
=
=
10V
1MΩ
TA = 25°C
2 5 10 20
Forward current IF (mA)
50
Relative Current Transfer Ratio
vs. Ambient Temperature
2.4
2.2
2.0
1.8
Normalised to VCE = 10V ,
IF = 10mA , RBE = 1MΩ ,
TA = 25°C
1.6 IF = 20mA
1.4
1.2
1.0
I = 10mA
F
0.8
0.6
0.4 IF = 5mA
0.2
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-base Current vs.
Ambient Temperature
800
700 VCB= 10V
I = 50mA
600 F
500
400
300
V = 200V
CB
VCB= 10V
VCB= 10V
I = 10mA
F
IF = 10mA
IF = 5mA
200
100
0
-30
0 25 50 75 100
Ambient temperature TA ( °C )
DB91077m-AAS/A3