2SD1495.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD1495 데이타시트 다운로드

No Preview Available !

INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1495
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
APPLICATIONS
·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
1500
V
wwwVCEO
Collector-Emitter Voltage
600 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@ TC= 25
TJ Junction Temperature
4A
50 W
150
Tstg Storage Temperature Range
-45~150
isc Websitewww.iscsemi.cn

No Preview Available !

INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1495
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE=
600
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A
5.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3.5A; IB= 1A
ICBO Collector Cutoff Current
VCB= 600V; IE= 0
www.iscsemi.cnhFE DCCurrentGain
IC= 1A; VCE= 5V
6
1.5 V
10 μA
isc Websitewww.iscsemi.cn
2